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    Memristive device based on reversible intercalated ion transfer between two meta-stable phases
    1.
    发明专利
    Memristive device based on reversible intercalated ion transfer between two meta-stable phases 未知

    公开(公告)号：GB2577463A

    公开(公告)日：2020-03-25

    申请号：GB202000225

    申请日：2018-06-14

    Applicant: IBM

    Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV ,  GLENN JOHN MARTYNA ,  SEYOUNG KIM

    IPC: H01L45/00

    Abstract: Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.

    Phase change memory using multiple stacks of PCM materials
    2.
    发明专利
    Phase change memory using multiple stacks of PCM materials 未知

    公开(公告)号：GB2608308A

    公开(公告)日：2022-12-28

    申请号：GB202213056

    申请日：2021-01-26

    Applicant: IBM

    Inventor： TIAN SHEN ,  HENG WU ,  KEVIN WAYNE BREW ,  JINGYUN ZHANG

    IPC: H01L45/00 ,  G06N3/063 ,  G11C11/56 ,  G11C13/00

    Abstract: A method is presented for improved linearity of a phase change memory (PCM) cell structure. The method includes forming a bottom electrode (12) over a substrate (10), constructing a PCM stack (20) including a plurality of PCM layers each having a different crystallization temperature over the bottom electrode (12), and forming a top electrode (32) over the PCM stack (20). The crystallization temperature varies in an ascending order from the bottom electrode (12) to the top electrode (32).

    Memristive device based on reversible intercalated ion transfer between two meta-stable phases
    3.
    发明专利
    Memristive device based on reversible intercalated ion transfer between two meta-stable phases 未知

    公开(公告)号：GB2577463B

    公开(公告)日：2020-08-19

    申请号：GB202000225

    申请日：2018-06-14

    Applicant: IBM

    Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV ,  GLENN JOHN MARTYNA ,  SEYOUNG KIM

    IPC: H01L45/00

    Abstract: Memristive devices based on ion-transfer between two meta-stable phases in an ion intercalated material are provided. In one aspect, a memristive device is provided. The memristive device includes: a first inert metal contact; a layer of a phase separated material disposed on the first inert metal contact, wherein the phase separated material includes interstitial ions; and a second inert metal contact disposed on the layer of the phase separated material. The first phase of the phase separated material can have a different concentration of the interstitial ions from the second phase of the phase separated material such that the first phase of the phase separated material has a different electrical conductivity from the second phase of the phase separated material. A method for operating the present memristive device is also provided.

    Memristive structure
    4.
    发明专利
    Memristive structure 未知

    公开(公告)号：GB2577831A

    公开(公告)日：2020-04-08

    申请号：GB201918712

    申请日：2018-06-01

    Applicant: IBM

    Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  SEYOUNG KIM ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV

    IPC: H01L27/12

    Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

    Memristive structure
    7.
    发明专利
    Memristive structure 未知

    公开(公告)号：GB2577831B

    公开(公告)日：2021-10-13

    申请号：GB201918712

    申请日：2018-06-01

    Applicant: IBM

    Inventor： KEVIN WAYNE BREW ,  DENNIS NEWNS ,  SEYOUNG KIM ,  TALIA SIMCHA GERSHON ,  TEODOR KRASSIMIROV TODOROV

    IPC: H01L27/12

    Abstract: A method of fabricating a memristive structure for symmetric modulation between resistance states is presented. The method includes forming a first electrode and a second electrode over an insulating substrate, forming an anode contacting the first and second electrodes, forming an ionic conductor over the anode, forming a cathode of the same material as the anode over the ionic conductor, forming a third electrode over the cathode, and enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure, the anode and the cathode being formed from metastable mixed conducting materials with ion concentration dependent conductivity.

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