公开(公告)号：CA1199217A

公开(公告)日：1986-01-14

申请号：CA423104

申请日：1983-03-08

Applicant: IBM

Inventor： BRISKA MARIAN ,  SCHACKERT KLAUS ,  SEIFERT HANS-GORDON

IPC: G03F7/11 ,  B41C1/10 ,  G03F7/00 ,  G03F7/095 ,  B41F9/06

Abstract: OFFSET PRINTING FORM AND METHOD OF MAKING IT The offset printing form comprises a metal foil (1) rendered oleophobic and a superimposed micro-rough layer (2) in the form of the pattern to be printed, consisting of a resist filled with e.g. soot, possibly a thin metal layer (3) applied onto the resist layer (2), and a top layer (4) of photoresist. For making the offset printing form, a record carrier consisting of a metal foil (1) rendered oleophobic, a superimposed micro-rough resist layer (2) filled e.g. with soot, and a superimposed thin metal layer (3) with an inscribed pattern corresponding to the pattern to be printed, is blanket deposited with a layer (4) of a photoresist which is subsequently blanket irradiated, the radiation being reflected several times where the photoresist layer (4) lies on the metal layer (3), between the interface photoresist-aluminum and photoresist-air, and being subsequently developed. Simultaneously with development, or subsequently, exposed regions of metal layer (3) are removed, and finally the exposed regions of resist layer (2) are removed.

公开(公告)号：CA1163739A

公开(公告)日：1984-03-13

申请号：CA380782

申请日：1981-06-26

Applicant: IBM

Inventor： BAHR DIETRICH J ,  SCHACKERT KLAUS ,  BRISKA MARIAN

IPC: B41M5/24 ,  C09D101/12 ,  C09D3/14 ,  C09D3/76

Abstract: After having been pretreated by kneading at its softening temperature, a cellulose acetate is subjected to block polymerization by being kneaded with, for example, an ethylene vinyl acetate copolymerizate, at its mean softening temperature. If necessary, the block copolymerizate may be subsequently cross-linked by adding a peroxide.

公开(公告)号：FR2357070A1

公开(公告)日：1978-01-27

申请号：FR7717620

申请日：1977-06-03

Applicant: IBM

Inventor： PAAL GABOR ,  SCHACKERT KLAUS

IPC: H01L21/31 ,  H01L23/522 ,  H01L21/312 ,  H01L21/768 ,  H01L21/90

Abstract: Disclosed is a process for passivating a first metallization pattern on a semiconductor substrate and providing a substantially planar quartz surface for subsequent metallization patterns in which a first polymer layer is applied over a first metallization layer and other portions of the substrate, providing a substantially planar surface. After a first curing, the first layer of polymer material is removed down to a thin layer of defined thickness over the first metallization pattern and, after a second curing, a quartz layer is applied over the polymer layer forming a substantially planar quartz top surface. Also disclosed is a method of forming via holes to the first metallization pattern as well as particular photoresist resins.