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公开(公告)号:DE3576431D1
公开(公告)日:1990-04-12
申请号:DE3576431
申请日:1985-05-07
Applicant: IBM
Inventor: AMENDOLA ALBERT , SCHMECKENBECHER ARNOLD FRIEDRI , SOBON JOSEPH THOMAS
IPC: H05K3/46 , H01L21/48 , H05K1/03 , H05K1/09 , H05K1/11 , H05K3/06 , H05K3/10 , H05K3/14 , H05K3/38
Abstract: A process for forming a top surface metallurgy pattern on a green unsintered ceramic substrate (30) including the steps of forming indented lines (40) on the surface of the substrate, sintering the substrate, depositing a blanket layer (42) over the top surface of the substrate with a thickness less than the depth of the indented lines, applying a masking layer (46) over the metal layer, removing the masking layer over all portions except the indented lines, removing the exposed areas of the metal layer, and removing the remaining portions of the masking layer.
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公开(公告)号:DE3573355D1
公开(公告)日:1989-11-02
申请号:DE3573355
申请日:1985-05-07
Applicant: IBM
Inventor: ARNOLD ANTHONY FRANCIS , SCHMECKENBECHER ARNOLD FRIEDRI
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公开(公告)号:DE3163711D1
公开(公告)日:1984-06-28
申请号:DE3163711
申请日:1981-02-25
Applicant: IBM
Inventor: SCHMECKENBECHER ARNOLD FRIEDRI
IPC: H01L23/12 , C23F1/14 , C23F1/30 , H01L21/48 , C23F1/00 , H01L21/314 , H01L21/471
Abstract: The inventive solution for dissolving metal alloys which include tin comprises… (1) KJ in an amount of at least 0.3 moles/liter,… (2) J2 an amount of at least 0.195 moles/liter, and… (3) halogen ions selected from the group consisting of fluoride, chloride and bromide in an amount of at least 0.3 moles/liter. … The solution is used in a rework-method where the substrates are subjected to said solution for removing noble metal alloys containing tin while features formed of refractory metals are retained.
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公开(公告)号:DE2451485A1
公开(公告)日:1975-06-19
申请号:DE2451485
申请日:1974-10-30
Applicant: IBM
Inventor: SCHMECKENBECHER ARNOLD FRIEDRI
IPC: C04B37/02 , B28B11/04 , B32B15/04 , C04B41/88 , H05K1/09 , H05K3/00 , H05K3/10 , H05K3/12 , C04B41/38 , H01L21/90
Abstract: A process for metallizing a ceramic green sheet having via holes or recessed grooves formed therein by depositing a mask forming material over the green sheet, the mask forming material being non-wettable by a composition, either conductive or nonconductive, to be subsequently deposited in the via holes or recessed grooves. After the depositing step, a metal paste is spread or wiped into the vias and grooves and then the sheets are laminated and fired to form a multi-layer ceramic interconnection package whereby the mask forming material is volatized and eliminated from the structure without the necessity of removing the mask forming material in the conventional etching or peeling away methods.
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公开(公告)号:IT1151078B
公开(公告)日:1986-12-17
申请号:IT1961380
申请日:1980-02-01
Applicant: IBM
Inventor: SCHMECKENBECHER ARNOLD FRIEDRI
IPC: H05K3/02 , C04B41/51 , C04B41/88 , C23C14/04 , G03F7/00 , H01L21/48 , H01L23/12 , H05K1/03 , H05K1/09 , H05K3/24 , H05K
Abstract: A liftoff process for selectively depositing additional metal layers on an existing metallurgy pattern supported on a dielectric substrate which includes the steps of (1) depositing a melt material on the dielectric substrate which material, after melting, has the characteristic of wetting the substrate surface, but not the existing metallurgy pattern, (2) heating the melt material to convert it to a liquid wherein the material is distributed to cover the dielectric substrate surface, but not the metallurgy pattern, (3) cooling the liquid material to solidify it, (4) depositing a blanket layer of metal over the solidified material and the metallurgy pattern, and (5) dissolving the solidified material in a suitable solvent thereby removing the material and the overlying metal layer portions.
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公开(公告)号:DE3060787D1
公开(公告)日:1982-10-28
申请号:DE3060787
申请日:1980-02-01
Applicant: IBM
Inventor: SCHMECKENBECHER ARNOLD FRIEDRI
IPC: H05K3/02 , C04B41/51 , C04B41/88 , C23C14/04 , G03F7/00 , H01L21/48 , H01L23/12 , H05K1/03 , H05K1/09 , H05K3/24 , H01L21/00 , H01L21/308 , H01L21/88
Abstract: A liftoff process for selectively depositing additional metal layers on an existing metallurgy pattern supported on a dielectric substrate which includes the steps of (1) depositing a melt material on the dielectric substrate which material, after melting, has the characteristic of wetting the substrate surface, but not the existing metallurgy pattern, (2) heating the melt material to convert it to a liquid wherein the material is distributed to cover the dielectric substrate surface, but not the metallurgy pattern, (3) cooling the liquid material to solidify it, (4) depositing a blanket layer of metal over the solidified material and the metallurgy pattern, and (5) dissolving the solidified material in a suitable solvent thereby removing the material and the overlying metal layer portions.
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公开(公告)号:DE2745581A1
公开(公告)日:1978-06-15
申请号:DE2745581
申请日:1977-10-11
Applicant: IBM
IPC: H01G4/12 , C04B33/13 , C04B35/634 , C04B37/00 , C04B38/00 , C04B41/00 , H01L23/08 , H01L23/12 , H05K1/03 , H05K1/09 , H05K3/00 , H05K3/10 , H05K3/12 , H05K3/46 , H01L49/02
Abstract: A method of making a multi-layer ceramic substrate for an integrated circuit device package having internal circuitry by forming a plurality of porous ceramic bisque sheets, impregnating the pores of the bisque sheets with an organic binder material, forming openings through the impregnated bisque sheets, filling the openings with conductive material and imprinting conductive circuitry patterns on the surface of the impregnated bisque sheets of a conductive material, assembling the plurality of apertured printed impregnated bisque sheets into a laminated unit, and sintering the laminated unit to form a unitary laminated structure having an interconnected internal circuitry system.
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公开(公告)号:DE1222349B
公开(公告)日:1966-08-04
申请号:DEJ0024294
申请日:1963-08-21
Applicant: IBM
Inventor: SCHMECKENBECHER ARNOLD FRIEDRI
Abstract: A magnetic store element is made by immersing a chromium substrate in an acid platinum salt solution and then electro-depositing a film of magnetic material, e.g. Ni/Fe alloy. A glass tube is coated with chromium preferably by vacuum evaporation to form a layer 100-1000 rA thick, and is then treated with chlorplatinic acid. The plated substrate 22 is mounted within a container 17 having an inner cylindrical Pt anode 24, and is filled with an electrolyte containing iron and nickel chlorides, NaCl, H3BO3, saccharin, and lauryl sulphate. A magnetic field is applied during plating by a conductor coaxial in the tube. pH is maintained at 3.5. A plating containing 80% Ni is formed, 8000 rA thick. Graphs are given showing the more rapid switching time with coatings including the platinum layer.
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