公开(公告)号：DE3485129D1

公开(公告)日：1991-11-07

申请号：DE3485129

申请日：1984-07-03

Applicant: IBM

Inventor： AMENDOLA ALBERT ,  SCHMECKENBECHER ARNOLD FREDERI ,  SOBON JOSEPH T

IPC: H05K3/46 ,  B32B18/00 ,  C04B41/45 ,  C04B41/52 ,  C04B41/81 ,  C04B41/89 ,  C09D5/25 ,  H01L21/48 ,  H05K1/02 ,  H05K1/03 ,  H05K1/09 ,  H05K3/00 ,  H05K3/10 ,  H05K3/12 ,  C04B41/88

公开(公告)号：DE3779253D1

公开(公告)日：1992-06-25

申请号：DE3779253

申请日：1987-08-18

Applicant: IBM

Inventor： AMENDOLA ALBERT ,  KUMAR ANANDA HOSAKERE ,  VANCE THOMAS RAY

IPC: H01L21/3205 ,  H05K3/04 ,  H05K3/20 ,  H05K3/22 ,  H05K3/32 ,  H05K3/40 ,  H01L23/52 ,  H01L21/48 ,  H01L21/90 ,  H03K3/22

Abstract: Disclosed is a method for repairing opens (12) in thin film conductor lines (11) on a substrate (10), preferably a multilayered ceramic substrate. An unpatterned repair metal film (20) is placed over a general area of open defects (12) in conductive lines (11) on a substrate (10). Preferably, this metal is placed over the conductive lines and opens therein by decal transfer. The assembly is then heated to cause diffusion bonding between the repair metal (20) and conductive lines (11), but not between the repair metal (20) and substrate (10). After diffusion bonding, the structure has metal bridges formed across any open defects covered by the repair film and also between adjacent conductive lines. The area of repair is then subjected to ultrasonic energy in a liquid ambient for a time at least long enough to remove metal bridges between adjacent conductive lines, but less than that required to remove repair metal bridges over the opens in the conductive lines. The resultant structure has metal bridges spanning opens in the conductive lines, and no metal bridges between adjacent conductive lines.

公开(公告)号：DE3576431D1

公开(公告)日：1990-04-12

申请号：DE3576431

申请日：1985-05-07

Applicant: IBM

Inventor： AMENDOLA ALBERT ,  SCHMECKENBECHER ARNOLD FRIEDRI ,  SOBON JOSEPH THOMAS

IPC: H05K3/46 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K1/11 ,  H05K3/06 ,  H05K3/10 ,  H05K3/14 ,  H05K3/38

Abstract: A process for forming a top surface metallurgy pattern on a green unsintered ceramic substrate (30) including the steps of forming indented lines (40) on the surface of the substrate, sintering the substrate, depositing a blanket layer (42) over the top surface of the substrate with a thickness less than the depth of the indented lines, applying a masking layer (46) over the metal layer, removing the masking layer over all portions except the indented lines, removing the exposed areas of the metal layer, and removing the remaining portions of the masking layer.

公开(公告)号：DE3379187D1

公开(公告)日：1989-03-16

申请号：DE3379187

申请日：1983-04-20

Applicant: IBM

Inventor： AMENDOLA ALBERT ,  CHRISTENSEN RICHARD GILBERT ,  YEREANCE JOHN GERALD

IPC: H05K3/00 ,  G03F1/00 ,  G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/48 ,  H05K3/14 ,  H05K3/24

Abstract: This invention concerns method and apparatus for making a mask (214) conforming to a cured MLC substrate (78). The mask (214) when made may be used to add layers of metallization to the cured substrate (78) by conventional photolithographic techniques. The method and apparatus feature use of the cured substrate (78) itself to pattern the mask (214). Particularly, the substrate (78) is aligned with the unpatterned mask (214) and the image of the substrate (78) transferred to the mask (214) such that once patterned, the mask (214) may subsequently be realigned with the substrate (78). A system of posts (202, 204) and notches (226, 232) and grooves (228,234) is used to align the substrate (78) and mask (214) and a lens system used to transfer the substrate image to the mask (214).