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公开(公告)号:JP2002303992A
公开(公告)日:2002-10-18
申请号:JP2001388858
申请日:2001-12-21
Applicant: IBM
Inventor: SCHMIDT MARKUS
IPC: G03F7/022 , G03F7/039 , G03F7/40 , G03F7/42 , G11B5/127 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/4763
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a micrometallic structure having a high aspect ratio. SOLUTION: This method includes a step of manufacturing trenches by photolithography. Polymer chains are formed on the inside surface of the trenches. As a result, the microdimensions in the photolithography process can be reduced to arbitrary dimensions down to zero. This method is a method extremely general in terms of being applicable to arbitrary process inclusive of delineation of the microdimensions by the photolithography. The most general application is the reduction of the reading/writing dimensions of a thin-film magnetic head and this method is usable in the arbitrary technology in which the manufacture of the microstructure having the high aspect ratio is important.
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公开(公告)号:WO2014026799A2
公开(公告)日:2014-02-20
申请号:PCT/EP2013063995
申请日:2013-07-03
Applicant: IBM , IBM DEUTSCHLAND
Inventor: SCHMIDT MARKUS , HAAG MICHAEL , KELLMANN RUEDIGER
IPC: H01L31/0224
CPC classification number: H01L31/02327 , H01L31/022425 , H01L31/054 , H01L31/0547 , Y02E10/52
Abstract: A photovoltaic cell with reduced shading and series resistance for increased efficiency. A contact grid containing a set of optical structures is embedded into a substrate. An array of electrical contacts is aligned and in electrical communication with the optical structures and provides electrical communication between the active layer and the substrate.
Abstract translation: 具有减少阴影和串联电阻的光伏电池可提高效率。 包含一组光学结构的接触栅格被嵌入到衬底中。 电触点阵列与光学结构对准并电连通,并提供有源层和衬底之间的电连通。
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公开(公告)号:WO02054458A3
公开(公告)日:2003-03-27
申请号:PCT/EP0115256
申请日:2001-12-21
Applicant: IBM , IBM DEUTSCHLAND , SCHMIDT MARKUS
Inventor: SCHMIDT MARKUS
IPC: G03F7/022 , G03F7/039 , G03F7/40 , G03F7/42 , G11B5/127 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/4763
CPC classification number: B81C1/00619 , G03F7/40 , H01L21/0273
Abstract: A method for the manufacture of micro metallic structures having high aspect ratios is provided, wherein said method comprises the step of photolithographically producing trenches in a substrate. Polymer chains are formed on the inner surface of said trenches. Thus, the critical dimensions in the photolithographical process can be reduced to any dimension down to zero. The method is quite general in its application to any process that includes the definition of a critical dimension by photolithography. Immediate applications are the reduction of the read and write dimensions in thin film magnetic heads, but the invention can be used in any technology where the manufacture of microstructures having a high aspect ratio is of interest.
Abstract translation: 提供一种用于制造具有高纵横比的微型金属结构的方法,其中所述方法包括在衬底中光刻制造沟槽的步骤。 聚合物链形成在所述沟槽的内表面上。 因此,光刻工艺中的临界尺寸可以降低到零至零的任何尺寸。 该方法在其应用于包括通过光刻术定义临界尺寸的任何工艺方面是相当普遍的。 立即应用是在薄膜磁头中减小读取和写入尺寸,但是本发明可以用于制造具有高纵横比的微结构感兴趣的任何技术中。
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公开(公告)号:WO2008141863A3
公开(公告)日:2009-03-05
申请号:PCT/EP2008054205
申请日:2008-04-08
Applicant: IBM , KRAUSE RAINER KLAUS , PFEIFFER GERD , MUEHGE THORSTEN , EICKELMANN HANS-JUERGEN , HAAG MICHAEL , SCHMIDT MARKUS
Inventor: KRAUSE RAINER KLAUS , PFEIFFER GERD , MUEHGE THORSTEN , EICKELMANN HANS-JUERGEN , HAAG MICHAEL , SCHMIDT MARKUS
IPC: H01L31/0224 , H01L27/142 , H01L31/068 , H01L31/18
CPC classification number: H01L31/022441 , H01L31/02008 , H01L31/022425 , H01L31/0504 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
Abstract: A method of backside contacting of thin layer photovoltaic cells consisting of Si elements as well as thin film cells, like CIGS, is provided, consisting of the following steps: providing a p-n-junction consisting of a thin n-doped Si layer and a thin p-doped Si layer bonded on top of said n-doped Si layer; bonding said p-n-junction to a glass substrate; preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer; and creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.
Abstract translation: 提供了由Si元素组成的薄层光伏电池以及诸如CIGS的薄膜电池的背面接触的方法,包括以下步骤:提供由n掺杂的薄Si层和薄的Si层组成的pn结 p掺杂Si层结合在所述n掺杂Si层的顶部; 将所述p-n结键合到玻璃基板上; 在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上制备接触点; 以及在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上产生接触引脚。
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公开(公告)号:GB2516011A
公开(公告)日:2015-01-14
申请号:GB201311815
申请日:2013-07-02
Applicant: IBM
Inventor: SCHMIDT MARKUS , EICKELMANN HANS-JUERGEN , KELLMANN RUEDIGER , KUEHL HARTMUT , HOVEL HAROLD JOHN , STEEN STEVEN ERIK
IPC: H01L31/052 , H01L31/0232
Abstract: The invention relates to concentrated photovoltaics for thin film solar cell devices. The thin film solar cell device 100 comprises a substrate 10 with one or more thin film radiation absorbers 12 and a cover 20 which covers the substrate and the absorbers. Mounted to this is an integrated optical system 14, comprising at least one optical element 16 used for concentrating the light onto the solar cell. The optical element 16 and the corresponding radiation absorbers 12 are aligned with respect to their optical axis 24, such that an incoming radiation 22 is directed onto the radiation absorber 12 by the optical system 14. The device can have a second optical system 18 which is arranged between the first optical element and the radiation absorbers. The first optical system may be integrated at a top surface of the cover medium, and can comprise of a lens array, whilst the second optical system can comprise a light guide. The second optical element can be integrated with the top of the radiation absorbing device.
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公开(公告)号:DE10197137B4
公开(公告)日:2008-07-31
申请号:DE10197137
申请日:2001-12-21
Applicant: IBM
Inventor: SCHMIDT MARKUS
IPC: G03F7/022 , G03F7/40 , G03F7/039 , G03F7/42 , G11B5/127 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/4763
Abstract: A method for the manufacture of micro metallic structures having high aspect ratios is provided, wherein said method comprises the step of photolithographically producing trenches in a substrate. Polymer chains are formed on the inner surface of said trenches. Thus, the critical dimensions in the photolithographical process can be reduced to any dimension down to zero. The method is quite general in its application to any process that includes the definition of a critical dimension by photolithography. Immediate applications are the reduction of the read and write dimensions in thin film magnetic heads, but the invention can be used in any technology where the manufacture of microstructures having a high aspect ratio is of interest.
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公开(公告)号:AU2002234603A1
公开(公告)日:2002-07-16
申请号:AU2002234603
申请日:2001-12-21
Applicant: IBM
Inventor: SCHMIDT MARKUS
IPC: G03F7/022 , G03F7/039 , G03F7/40 , G03F7/42 , G11B5/127 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/4763
Abstract: A method for the manufacture of micro metallic structures having high aspect ratios is provided, wherein said method comprises the step of photolithographically producing trenches in a substrate. Polymer chains are formed on the inner surface of said trenches. Thus, the critical dimensions in the photolithographical process can be reduced to any dimension down to zero. The method is quite general in its application to any process that includes the definition of a critical dimension by photolithography. Immediate applications are the reduction of the read and write dimensions in thin film magnetic heads, but the invention can be used in any technology where the manufacture of microstructures having a high aspect ratio is of interest.
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8.
公开(公告)号:GB2522408A
公开(公告)日:2015-07-29
申请号:GB201400531
申请日:2014-01-14
Applicant: IBM
Inventor: SCHMIDT MARKUS , EICKELMANN HANS-JUERGEN , KUEHL HARTMUT , KELLMANN RUEDIGER , BREDEL HERBERT
IPC: H01L31/053 , H01L27/142 , H01L31/04
Abstract: A thin-film monolithically integrated solar module 100a comprising a thin-film solar cell 104, having at least one solar diode, on a transparent substrate 102, a thin-film energy storage device 106, and an electronic controller 108 comprising at least one thin-film transistor 110 above the thin-film energy storage device 106, wherein the electronic controller 108 is electrically connected to the thin-film solar cell 104 and the thin-film energy storage device 106 by vias 148. The thin-film solar cell 104 may comprise a transparent front-side electrode 120, a photovoltaic layer 122 and a back-side electrode 124. The module may also comprise a first dielectric layer 128. The energy storage device 106 may comprise a lower electrode 130, an active energy storage layer 132, and an upper electrode 134. Also disclosed is a method for manufacturing the above described device.
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公开(公告)号:DE10197137T1
公开(公告)日:2003-12-24
申请号:DE10197137
申请日:2001-12-21
Applicant: IBM
Inventor: SCHMIDT MARKUS
IPC: G03F7/022 , G03F7/039 , G03F7/40 , G03F7/42 , G11B5/127 , H01L21/027 , H01L21/033 , H01L21/302 , H01L21/3065 , H01L21/4763
Abstract: A method for the manufacture of micro metallic structures having high aspect ratios is provided, wherein said method comprises the step of photolithographically producing trenches in a substrate. Polymer chains are formed on the inner surface of said trenches. Thus, the critical dimensions in the photolithographical process can be reduced to any dimension down to zero. The method is quite general in its application to any process that includes the definition of a critical dimension by photolithography. Immediate applications are the reduction of the read and write dimensions in thin film magnetic heads, but the invention can be used in any technology where the manufacture of microstructures having a high aspect ratio is of interest.
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