公开(公告)号：US3770516A

公开(公告)日：1973-11-06

申请号：US3770516D

申请日：1972-01-12

Applicant: IBM

Inventor： DUFFY M ,  SCHUMANN P ,  YEH T

IPC: H01L21/00 ,  H01L21/74 ,  H01L21/761 ,  H01L21/8222 ,  H01L27/00 ,  H01L7/54

CPC classification number: H01L21/00 ,  H01L21/743 ,  H01L21/761 ,  H01L21/8222 ,  H01L27/00

Abstract: Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.

Abstract translation: 使用各种离子注入技术制造单片集成电路，用于制造二极管，晶体管，电阻器，电容器，地下通道连接，子集电极结等，并且用于改变杂质分布，金掺杂，修整电阻值，改变接合深度和隔离 地区。