Abstract:
Monolithic integrated circuits are made utilizing various ion implantation techniques for making diodes, transistors, resistors, capacitors, underpass connections, sub-collector junctions, etc., and for altering impurity profiles, gold doping, trimming resistance values, altering junctions depth, and isolating regions.
Abstract:
An apparatus for detecting the presence of inclusions in semiconductor material having a polychromatic light source, a support for a semiconductor body, a light sensing means positioned to operate on light transmitted through the body from the light source, the sensing means including a substrate of the same type of semiconductor materials as the material of the semiconductor body, and having at least a PN junction in the substrate with means to backbias the junction, a means to indicate the relative amounts of light transmitted through the semiconductor body that is sensed by the sensing means. A method for detecting internal inclusion in a semiconductor body by directing through the body a beam of polychromatic light, sensing the light energy transmitted to the body with a light sensing element of the same type semiconductor material as the body being investigated.