公开(公告)号：JP2001244477A

公开(公告)日：2001-09-07

申请号：JP2001017463

申请日：2001-01-25

Applicant: IBM

Inventor： SCOTT CLAUDER ,  SCHEPIS DOMINIC J ,  MELANIE J SHERONY

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device having an SOI structure operating by improved performance compared to a conventional SOI device, by forming a junction leaking path which consistently and effectively diffuses a main body charge during the operation of the device in the source area and the drain area of SOI structure. SOLUTION: The semiconductor device of SOI structure has a source area and a drain area, which are formed by injecting silicon or germanium ions in a silicon layer and which are made to be amorphous. The completely amorphous source area and the drain area, bring permanent crystal defects and diffuse a charge in a device main body. Thus, the leak of a p-n junction improving the whole efficiency and performance of the device is generated.