公开(公告)号：JP2001244477A

公开(公告)日：2001-09-07

申请号：JP2001017463

申请日：2001-01-25

Applicant: IBM

Inventor： SCOTT CLAUDER ,  SCHEPIS DOMINIC J ,  MELANIE J SHERONY

IPC: H01L29/78 ,  H01L21/265 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a semiconductor device having an SOI structure operating by improved performance compared to a conventional SOI device, by forming a junction leaking path which consistently and effectively diffuses a main body charge during the operation of the device in the source area and the drain area of SOI structure. SOLUTION: The semiconductor device of SOI structure has a source area and a drain area, which are formed by injecting silicon or germanium ions in a silicon layer and which are made to be amorphous. The completely amorphous source area and the drain area, bring permanent crystal defects and diffuse a charge in a device main body. Thus, the leak of a p-n junction improving the whole efficiency and performance of the device is generated.

公开(公告)号：MY133983A

公开(公告)日：2007-11-30

申请号：MYPI20012657

申请日：2001-06-06

Applicant: IBM

Inventor： JAMES A CULP ,  JAWAHAR P NAYAK ,  WERNER A RAUSCH ,  MELANIE J SHERONY ,  STEVEN H VOLDMAN ,  NOAH D ZAMDMER

IPC: H01L27/04 ,  H01L21/822 ,  H01L29/76 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

Abstract: A SEMICONDUCTOR CHIP INCLUDES A SEMICONDUCTOR SUBSTRATE HAVING A RECTIFYING CONTACT DIFFUSION AND A NON-RECTIFYING CONTACT DIFFUSION. A HALO DIFFUSION IS ADJACENT THE RECTIFYING CONTACT DIFFUSION AND NO HALO DIFFUSION IS ADJACENT THE NON-RECTIFYING CONTACT DIFFUSION. THE RECTIFYING CONTACT DIFFUSION CAN BE A SOURCE/DRAIN DIFFUSION OF AN FET TO IMPROVE RESISTANCE TO PUNCH-THROUGH. THE NON-RECTIFYING CONTACT DIFFUSION MAY BE AN FET BODY CONTACT, A LATERAL DIODE CONTACT, OR A RESISTOR OR CAPACITOR CONTACT. AVOIDING A HALO FOR NON-RECTIFYING CONTACTS REDUCES SERIES RESISTANCE AND IMPROVES DEVICE CHARACTERISTICS. IN ANOTHER EMBODIMENT ON A CHIP HAVING DEVICES WITH HALOS ADJACENT DIFFUSIONS, NO HALO DIFFUSION IS ADJACENT A RECTIFYNG CONTACT DIFFUSION OF A LATERAL DIODE, SIGNIFICANTLY IMPROVING IDEALITY OF THE DIODE AND INCREASING BREAKDOWN VOLTAGE.@@FIGURE 1A