公开(公告)号：GB2605668A

公开(公告)日：2022-10-12

申请号：GB202114897

申请日：2021-10-19

Applicant: IBM

Inventor： KO-TAO LEE ,  SHAWN XIAOFENG DU ,  NING LI ,  XIN ZHANG

IPC: H01L21/20 ,  H01L21/033

Abstract: A dielectric layer is formed on a Si-based substrate 102 and portions of the dielectric layer are etched to form a crisscrossing grid pattern of remaining portions of the dielectric layer 104 and to expose the substrate in areas where the dielectric layer is removed. GaN-based layers are deposited on the substrate in growth areas between sidewalls of the remaining portions of the dielectric layer. Semiconductor devices may be formed on the GaN-based layers.