公开(公告)号：GB2585295A

公开(公告)日：2021-01-06

申请号：GB202013202

申请日：2019-01-15

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  KO-TAO LEE ,  NING LI ,  DEVENDRA SADANA

IPC: A61N5/06

Abstract: Probes include a probe body configured to penetrate biological tissue. High-efficiency light sources are positioned within the probe body. Each high-efficiency light source has a sufficiently intense light output to trigger a light- sensitive reaction in neighboring tissues and has a sufficiently low power output such that a combined heat output of multiple light sources does cause a disruptive temperature increase in the neighboring tissues.

公开(公告)号：GB2581742A

公开(公告)日：2020-08-26

申请号：GB202007216

申请日：2018-11-02

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  NING LI ,  KO-TAO LEE ,  DEVENDRA SADANA ,  ROY YU

IPC: A61B5/00

Abstract: Technical solutions are described for implementing an optogenetics treatment using a probe and probe controller are described. A probe controller controls a probe to perform the method that includes emitting, by a light source of the probe, the probe is embeddable in a tissue, a light wave to interact with a corresponding chemical in one or more cells in the tissue. The method further includes capturing, by a sensor of the probe, a spectroscopy of the light wave interacting with the corresponding chemical. The method further includes sending, by the probe, the spectroscopy to an analysis system. The method further includes receiving, by the probe, from the analysis system, adjusted parameters for the light source, and adjusting, by a controller of the probe, settings of the light source according to the received adjusted parameters to emit a different light wave to interact with the corresponding chemical.

公开(公告)号：GB2605668A

公开(公告)日：2022-10-12

申请号：GB202114897

申请日：2021-10-19

Applicant: IBM

Inventor： KO-TAO LEE ,  SHAWN XIAOFENG DU ,  NING LI ,  XIN ZHANG

IPC: H01L21/20 ,  H01L21/033

Abstract: A dielectric layer is formed on a Si-based substrate 102 and portions of the dielectric layer are etched to form a crisscrossing grid pattern of remaining portions of the dielectric layer 104 and to expose the substrate in areas where the dielectric layer is removed. GaN-based layers are deposited on the substrate in growth areas between sidewalls of the remaining portions of the dielectric layer. Semiconductor devices may be formed on the GaN-based layers.

公开(公告)号：GB2585295B

公开(公告)日：2022-06-08

申请号：GB202013202

申请日：2019-01-15

Applicant: IBM

Inventor： HARIKLIA DELIGIANNI ,  KO-TAO LEE ,  NING LI ,  DEVENDRA SADANA

IPC: A61N5/06

Abstract: Probes include a probe body configured to penetrate biological tissue. High-efficiency light sources are positioned within the probe body. Each high-efficiency light source has a sufficiently intense light output to trigger a light-sensitive reaction in neighboring tissues and has a sufficiently low power output such that a combined heat output of multiple light sources does cause a disruptive temperature increase in the neighboring tissues.