公开(公告)号：DE3277264D1

公开(公告)日：1987-10-15

申请号：DE3277264

申请日：1982-06-29

Applicant: IBM

Inventor： HANSEN HOWARD HELGE ,  LASKY JEROME BRETT ,  SILVERMAN RONALD R

IPC: H01L21/265 ,  H01L21/268 ,  H01L21/74

Abstract: A method for annealing an ion implanted region (14) buried in a semiconductor substrate (10) without the undesirable effects of thermal diffusion, which includes the radiation of the substrate by a continuous laser having an emission wavelength longer than 600 nm which the buried ion implanted region will absorb strongly but which will be substantially unabsorbed by the unimplanted regions.Results can be improved when the substrate is heated to approximately 300°C during this laser annealing.

公开(公告)号：CA1189768A

公开(公告)日：1985-07-02

申请号：CA404043

申请日：1982-05-28

Applicant: IBM

Inventor： HANSEN HOWARD H ,  LASKY JEROME B ,  SILVERMAN RONALD R

IPC: H01L21/265 ,  H01L21/268 ,  H01L21/74 ,  H01L21/428

Abstract: A METHOD OF LASER ANNEALING OF SUBSURFACE ION IMPLANTED REGIONS A method for annealing ion implanted regions buried in a semiconductor substrate without the undesirable effects of thermal diffusion which includes the radiation of the substrate by a continuous laser having an emission frequency longer than 600 nanometers which the buried ion implanted regions will absorb strongly but which will be substantially unabsorbed by the unimplanted regions. Superior results can be obtained when the substrate is heated to approximately 300.degree. during this laser annealing.