Abstract:
A METHOD OF PARTIALLY PLANARIZING AN ELECTRICALLY INSULATIVE LAYER OVER AN INTEGRATED CIRCUIT SUBSTRATE WHICH HAS A RAISED LINE METALLIZATION PATTERN HAVING NARROWER LINES AND WIDER LINES. THE INSULATIVE LAYER HAS NARROWER AND WIDER ELEVATIONS CORRESPONDING TO THE UNDERLYING LINES. RESPUTTERING OF SAID INSULATIVE LAYER IS CONDUCTED FOR AN AMOUNT OF TIME SUFFICIENT TO SO PLANARIZE ITS WIDER TIONS IN THE LAYER BUT INSUFFICIENT TO SO PLANARIZE ITS WIDER ELEVATIONS. THIS METHOD IS USEFUL IN PLANARIZING INSULATIVE LAYER ELEVATIONS THROUGH WHICH VIA HOLES ARE TO BE FORMED, PARTICULARLY VIA HOLES WHICH ARE WIDER THAN THE UNDERLYING METALLIZING LINES WHICH THEY CONTACT. SUCH A PLANARIZATION METHOD IN VIA HOLE FORMATION AVOIDS THE TUNNELING EFFECTS WHICH WOULD OTHERWISE RESULT FROM THE OVER-CHEMICAL ETCHING NECESSARY TO FORM THE VIA HOLES.
Abstract:
To reduce the risk of contamination by pieces of the wiper lining becoming detached, the transducing apertures (511;513), in the wiper lining (502, 503, 504, 505) of a flexible magnetic data storage disk/jacket assembly, are cut to larger dimensions than the jacket apertures (28X) registering therewith are punched to. Preferably the wiper lining is cut into two parallel separated strips, and after the fixing of the strips to the jacket blank (118 X) the blank is punched in the aperture defined by the gap between the strips. A single wiper lining aperture can accommodate two registered jacket apertures which can be off-centre with respect to the wiper lining aperture.