公开(公告)号：CA2043172A1

公开(公告)日：1991-12-29

申请号：CA2043172

申请日：1991-05-24

Applicant: IBM

Inventor： ABERNATHEY JOHN R ,  MANN RANDY W ,  PARRIES PAUL C ,  SPRINGER JULIE A

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532

Abstract: A method of forming interconnections of devices of integrated circuits, especially interconnecting spaced source/drain regions and/or gate regions, and the resulting structures are provided. An etch-stop material such as silicon dioxide is deposited over the entire substrate on which the devices are formed. A layer of silicon is deposited over etch-stop material, and the silicon is selectively etched to reveal the etch-stop material at the regions to be connected. The etch-stop material at those regions is then removed. Following this a high-conductivity material, which is either a refractory metal or a silicide formed from layers of silicon and a refractory metal, is formed on the substrate connecting the spaced regions.

公开(公告)号：DE69123884T2

公开(公告)日：1997-07-17

申请号：DE69123884

申请日：1991-06-11

Applicant: IBM

Inventor： ABERNATHEY JOHN R ,  MANN RANDY W ,  PARRIES PAUL C ,  SPRINGER JULIE A

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/60 ,  H01L23/485

Abstract: A method of forming interconnections of devices of integrated circuits, especially interconnecting spaced source/drain regions and/or gate regions, and the resulting structures are provided. An etch-stop material (24) such as silicon dioxide is deposited over the entire substrate (10) on which the devices are formed. A layer of silicon (26) is deposited over etch-stop material, and the silicon is selectively etched to reveal the etch-stop material at the regions (12, 20) to be connected. The etch-stop material (24) at those regions is then removed. Following this a high-conductivity material (34), which is either a refractory metal or a silicide formed from layers of silicon and a refractory metal, is formed on the substrate connecting the spaced regions (12, 20).

公开(公告)号：DE69123884D1

公开(公告)日：1997-02-13

申请号：DE69123884

申请日：1991-06-11

Applicant: IBM

Inventor： ABERNATHEY JOHN R ,  MANN RANDY W ,  PARRIES PAUL C ,  SPRINGER JULIE A

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/60 ,  H01L23/485

Abstract: A method of forming interconnections of devices of integrated circuits, especially interconnecting spaced source/drain regions and/or gate regions, and the resulting structures are provided. An etch-stop material (24) such as silicon dioxide is deposited over the entire substrate (10) on which the devices are formed. A layer of silicon (26) is deposited over etch-stop material, and the silicon is selectively etched to reveal the etch-stop material at the regions (12, 20) to be connected. The etch-stop material (24) at those regions is then removed. Following this a high-conductivity material (34), which is either a refractory metal or a silicide formed from layers of silicon and a refractory metal, is formed on the substrate connecting the spaced regions (12, 20).

公开(公告)号：CA2043172C

公开(公告)日：1996-04-09

申请号：CA2043172

申请日：1991-05-24

Applicant: IBM

Inventor： ABERNATHEY JOHN R ,  MANN RANDY W ,  PARRIES PAUL C ,  SPRINGER JULIE A

IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L23/522

Abstract: A method of forming interconnections of devices of integrated circuits, especially interconnecting spaced source/drain regions and/or gate regions, and the resulting structures are provided. An etch-stop material such as silicon dioxide is deposited over the entire substrate on which the devices are formed. A layer of silicon is deposited over etch-stop material, and the silicon is selectively etched to reveal the etch-stop material at the regions to be connected. The etch-stop material at those regions is then removed. Following this a high-conductivity material, which is either a refractory metal or a silicide formed from layers of silicon and a refractory metal, is formed on the substrate connecting the spaced regions.