公开(公告)号：DE3485107D1

公开(公告)日：1991-10-31

申请号：DE3485107

申请日：1984-07-24

Applicant: IBM

Inventor： POWELL JIMMIE L ,  STANDLEY CHARLES L STANDLEY CH ,  SUIERVELD JOHN

IPC: H01L21/306 ,  C03C15/00 ,  H01L21/311 ,  H01L21/768 ,  H05K3/46 ,  H01L21/31 ,  H01L21/60

Abstract: @ A process for forming via openings (60) in a relatively thick layer (50) of borosilicate glass while controlling the degree of taper of the side walls of the opening to be not less than 45° by (1) depositing a layer of silicon nitride that contains silicon in an amount in excess of stoichiometric in Si 3 N 4 (2) densifying the silicon nitride layer, (3) depositing a layer of resist, (4) exposing and developing the layer of resist to define a desired pattern of openings in the borosilicate glass layer, (5) removing the exposed silicon nitride areas, and (6) subjecting the resultant exposed borosilicate glass surface to an etchant for the glass.