公开(公告)号：GB2628293A

公开(公告)日：2024-09-18

申请号：GB202409170

申请日：2022-12-06

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  MATTHIAS GEORG GOTTWALD ,  STEPHEN L BROWN

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: A top pinned SAF-containing magnetic tunnel junction structure is provided that contains a coupling spacer composed of a paramagnetic hexagonal metal phase material that has a stoichiometric ratio of Me3X or Me2X, wherein Me is a magnetic metal having a magnetic moment and X is a metal that alloys with Me in a hexagonal phase and dilutes the magnetic moment of Me. In embodiments in which a Me3X coupling spacer is present, Me is cobalt, and X is vanadium, niobium, tantalum, molybdenum or tungsten. In embodiments in which a Me2X coupling spacer is present, Me is iron and X is tantalum or tungsten. The coupling spacer is formed by providing a material stack including at least a precursor paramagnetic hexagonal metal phase material forming multilayered structure that includes alternating layers of magnetic metal, Me, and metal, X, and then thermally soaking the material stack.