公开(公告)号：GB2628293A

公开(公告)日：2024-09-18

申请号：GB202409170

申请日：2022-12-06

Applicant: IBM

Inventor： ALEXANDER REZNICEK ,  MATTHIAS GEORG GOTTWALD ,  STEPHEN L BROWN

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: A top pinned SAF-containing magnetic tunnel junction structure is provided that contains a coupling spacer composed of a paramagnetic hexagonal metal phase material that has a stoichiometric ratio of Me3X or Me2X, wherein Me is a magnetic metal having a magnetic moment and X is a metal that alloys with Me in a hexagonal phase and dilutes the magnetic moment of Me. In embodiments in which a Me3X coupling spacer is present, Me is cobalt, and X is vanadium, niobium, tantalum, molybdenum or tungsten. In embodiments in which a Me2X coupling spacer is present, Me is iron and X is tantalum or tungsten. The coupling spacer is formed by providing a material stack including at least a precursor paramagnetic hexagonal metal phase material forming multilayered structure that includes alternating layers of magnetic metal, Me, and metal, X, and then thermally soaking the material stack.

公开(公告)号：GB2608307A

公开(公告)日：2022-12-28

申请号：GB202213043

申请日：2021-01-14

Applicant: IBM

Inventor： SEONGHOON WOO ,  MATTHIAS GEORG GOTTWALD

IPC: H01L27/22

Abstract: A top pinned magnetic tunnel junction (MTJ) stack containing a magnetic pinned layered structure including a second magnetic pinned layer having strong perpendicular magnetic anisotropy (PMA) is provided. The magnetic pinned layered structure includes a crystal grain growth controlling layer located between a first magnetic pinned layer having a body centered cubic (BCC) texture and the second magnetic pinned layer. The presence of the crystal grain growth controlling layer facilitates formation of a second magnetic pinned layer having a face centered cubic (FCC) texture or a hexagonal closed packing (HCP) texture which, in turn, promotes strong PMA to the second magnetic pinned layer of the magnetic pinned layered structure.

公开(公告)号：GB2605096A

公开(公告)日：2022-09-21

申请号：GB202208597

申请日：2020-11-18

Applicant: IBM

Inventor： STEVEN HOLMES ,  BRUCE DORIS ,  MATTHIAS GEORG GOTTWALD ,  RAJIV V JOSHI ,  SUDIPTO CHAKRABORTY

IPC: H01L39/22 ,  G11C11/44

Abstract: A within-chip magnetic field control device is formed in proximity to a Josephson Junction (JJ) structure. The within-chip magnetic field control device includes wiring structures that are located laterally adjacent to the JJ structure. In some embodiments, the magnetic field control device also includes, in addition to the wiring structures, a conductive plate that is connected to the wiring structures and is located beneath the JJ structure. Use of electrical current through the wiring structures induces, either directly or indirectly, a magnetic field into the JJ structure. The strength of the field can be modulated by the amount of current passing through the wiring structures. The magnetic field can be turned off as needed by ceasing to allow current to flow through the wiring structures.