公开(公告)号：JPS63179583A

公开(公告)日：1988-07-23

申请号：JP30608887

申请日：1987-12-04

Applicant: IBM

Inventor： PIITAA DANIERU KAAKUNAA ,  RONARUDO FURANKURIN MAAKUSU ,  JIYOOJI DEBUIDO PETEITSUTO ,  JIERII MAKUFUAASON UTSUDOORU ,  SUTEIBUN ROORENTSU RAITO

IPC: H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/08 ,  H01L31/10 ,  H01L33/44 ,  H01S5/00

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.