公开(公告)号：JPH07210362A

公开(公告)日：1995-08-11

申请号：JP27816494

申请日：1994-11-11

Applicant: IBM

Inventor： RONARUDO FURANKURIN MAAKUSU ,  EDOUIN JIYOSEFU SERUKAA

IPC: G06F3/041 ,  G06F3/038 ,  G06F3/14 ,  G06F3/03 ,  G06F3/033

Abstract: PURPOSE: To attain the extension of an additional control function by starting a display operation, in response to control actuator power, designated by a tap signature identifying device and moving a cursor on a display screen according to the power applied to an actuator. CONSTITUTION: A cursor-context queue preserves a display window identifier and a cursor position inside respective display windows. A tap signature identifying device 44 recognizes power, which is coincident with a predetermined tap signature, applied to a stick controller 22 and a mouse 24 and consist of a tap corresponding to a predetermined display function. In operation, the power applied to the stick controller 22 is detected by a power converter 28, and the level and direction of the applied control power are applied to a stick interface 36. A display controller 34 receives this information, provides that information to the tap signature identifying device 44 and compares it with the control actuator power.

公开(公告)号：JPS62269346A

公开(公告)日：1987-11-21

申请号：JP8494187

申请日：1987-04-08

Applicant: IBM

Inventor： EFUREIMU BEMISU FURINTO ,  PIITAA ARUFURETSUDO GURUBAA ,  RONARUDO FURANKURIN MAAKUSU ,  GURAHAMU ORIIBU ,  AASAA RICHIYAADO JINGAA

IPC: H01L23/36 ,  H01L23/373 ,  H01L23/433 ,  H01L23/473

公开(公告)号：JPS63179583A

公开(公告)日：1988-07-23

申请号：JP30608887

申请日：1987-12-04

Applicant: IBM

Inventor： PIITAA DANIERU KAAKUNAA ,  RONARUDO FURANKURIN MAAKUSU ,  JIYOOJI DEBUIDO PETEITSUTO ,  JIERII MAKUFUAASON UTSUDOORU ,  SUTEIBUN ROORENTSU RAITO

IPC: H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/08 ,  H01L31/10 ,  H01L33/44 ,  H01S5/00

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.