Patent search ap:("IBM") AND inv:"PIITAA DANIERU KAAKUNAA" Page 1

1.

发明专利
SEMICONDUCTOR DEVICE 失效

公开(公告)号：JPS614278A

公开(公告)日：1986-01-10

申请号：JP2214585

申请日：1985-02-08

Applicant: IBM

Inventor： TOOMASU NERUSON JIYAKUSON , PIITAA DANIERU KAAKUNAA , JIYOOJI DEEBITSUDO PETEITSUTO , JIERII MATSUKU FUAASON UTSUDOO

IPC: H01L29/41 , H01L21/28 , H01L21/285 , H01L29/43 , H01L29/45

2.

发明专利
FORMATION OF SUBSTANCE LAYER BY MOLECULE BEAM 失效

公开(公告)号：JPS5864131A

公开(公告)日：1983-04-16

申请号：JP13581282

申请日：1982-08-05

Applicant: IBM

Inventor： JIYON ROORENSU FURIIOUFU , PIITAA DANIERU KAAKUNAA , JIYOOJI DEEBITSUDO PETEITSUTO , JIERII MAKUFUAASUN UTSUDOORU

IPC: B01J19/08 , C01G15/00 , C01G28/00 , C30B23/02 , C30B31/20 , H01L21/02 , H01L21/203

3.

发明专利
MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE 失效

公开(公告)号：JPS63202916A

公开(公告)日：1988-08-22

申请号：JP80288

申请日：1988-01-07

Applicant: IBM

Inventor： ERITSUKU ROI FUOOSAMU , PIITAA DANIERU KAAKUNAA , JIYOOJI DEIBITSUDO PETEITSUTO , ARAN KURAAKU UOORIN , JIERII MATSUKUFUAASUN UTSUDOOR

IPC: H01L21/302 , H01L21/20 , H01L21/263 , H01L21/306 , H01L21/3065

4.

发明专利
CONSTRUCTION OF SEMICONDUCTOR FOR INTEGRATED CIRCUIT AND MANUFACTURE OF INTEGRATED CIRCUIT 失效

公开(公告)号：JPS63299235A

公开(公告)日：1988-12-06

申请号：JP5955988

申请日：1988-03-15

Applicant: IBM

Inventor： PIITAA DANIERU KAAKUNAA , AREN KURAAKU WAARIN , JIERIII MAKUFUAASON UTSUDERU

IPC: H01L21/302 , H01L21/20 , H01L21/306 , H01L21/3065 , H01L21/337 , H01L21/338 , H01L21/86 , H01L29/43 , H01L29/778 , H01L29/812

5.

发明专利
SEMICONDUCTOR OPTOELECTRIC TRANSDUCER 失效

公开(公告)号：JPS63179583A

公开(公告)日：1988-07-23

申请号：JP30608887

申请日：1987-12-04

Applicant: IBM

Inventor： PIITAA DANIERU KAAKUNAA , RONARUDO FURANKURIN MAAKUSU , JIYOOJI DEBUIDO PETEITSUTO , JIERII MAKUFUAASON UTSUDOORU , SUTEIBUN ROORENTSU RAITO

IPC: H01L31/0248 , H01L31/02 , H01L31/0216 , H01L31/08 , H01L31/10 , H01L33/44 , H01S5/00

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.

6.

发明专利
SEMICONDUCTOR MEMORY 失效

公开(公告)号：JPS61241968A

公开(公告)日：1986-10-28

申请号：JP664086

申请日：1986-01-17

Applicant: IBM

Inventor： JIYON ROORENSU FURIIOOFU , TOOMASU NERUSON JIYAKUSON , PIITAA DANIERU KAAKUNAA

IPC: H01L29/812 , H01L21/338 , H01L27/10 , H01L29/205 , H01L29/778 , H01L29/80

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