公开(公告)号：JP2007194624A

公开(公告)日：2007-08-02

申请号：JP2006353015

申请日：2006-12-27

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MALHOTRA SANDRA G ,  DELIGIANNI HARIKLIA ,  VAN DER STRATEN OSCAR ,  SHAO XIAOYAN ,  ROSSNAGEL STEPHEN M ,  TAI TSONG-LIN

IPC: H01L23/52 ,  C23C16/16 ,  C23C16/56 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205

CPC classification number: H01L21/76843 ,  H01L21/28562 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  Y10S438/952

Abstract: PROBLEM TO BE SOLVED: To provide a process for direct electroplating of copper on a platable layer which is not copper.
SOLUTION: This process for forming an interconnection in a semiconductor structure comprises a step for forming a dielectric layer on a substrate, a step for forming a first barrier layer on the dielectric layer, and a step for forming a second barrier layer on the first barrier layer. The second barrier layer is selected from a group including ruthenium, platinum, palladium, rhodium and iridium. The second barrier layer is formed by a process including a step for manipulating so that bulk concentration of oxygen in the second barrier layer becomes 20 atm.% or less, and a step for forming a conductive layer on the second barrier layer. This process further can include a step for treating the second barrier to decrease the amount of an oxide on the surface of the second barrier layer.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供在不是铜的可镀层上直接电镀铜的方法。 解决方案：用于在半导体结构中形成互连的该工艺包括在衬底上形成电介质层的步骤，在电介质层上形成第一阻挡层的步骤和用于形成第二阻挡层的步骤 第一阻隔层。 第二阻挡层选自包括钌，铂，钯，铑和铱的组。 第二阻挡层通过包括操作步骤的方法形成，使得第二阻挡层中的氧的体积浓度变为20atm％以下，以及在第二阻挡层上形成导电层的步骤。 该方法还可以包括用于处理第二阻挡层以减少第二阻挡层的表面上的氧化物的量的步骤。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：DE69402232T2

公开(公告)日：1997-09-18

申请号：DE69402232

申请日：1994-01-14

Applicant: IBM

Inventor： BUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  GELORME JEFFREY D ,  WOOD ROBERT L ,  LINEHAN LEO L ,  SOORIYAKUMARAN RATNAM ,  TAI TSONG-LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: Improved chemically amplified negative tone microlithographic resist compositions and methods for the use thereof are disclosed. The compositions comprise, in admixture, a crosslinking agent, a polymeric binder, and a compound that generates acid upon exposure of the resist composition to imaging radiation. The invention is particularly related to compositions having a crosslinking agent which does not plasticize the polymeric binder or alternatively does not reduce the glass transition temperature thereof. This minimizes the diffusion of the acid component from exposed regions of the resist to unexposed regions, and helps maintain relief image dimensional control.

公开(公告)号：DE69402232D1

公开(公告)日：1997-04-30

申请号：DE69402232

申请日：1994-01-14

Applicant: IBM

Inventor： BUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  GELORME JEFFREY D ,  WOOD ROBERT L ,  LINEHAN LEO L ,  SOORIYAKUMARAN RATNAM ,  TAI TSONG-LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: Improved chemically amplified negative tone microlithographic resist compositions and methods for the use thereof are disclosed. The compositions comprise, in admixture, a crosslinking agent, a polymeric binder, and a compound that generates acid upon exposure of the resist composition to imaging radiation. The invention is particularly related to compositions having a crosslinking agent which does not plasticize the polymeric binder or alternatively does not reduce the glass transition temperature thereof. This minimizes the diffusion of the acid component from exposed regions of the resist to unexposed regions, and helps maintain relief image dimensional control.