公开(公告)号：JPH11186243A

公开(公告)日：1999-07-09

申请号：JP28213898

申请日：1998-10-05

Applicant: IBM

Inventor： ARMACOST MICHAEL D ,  CONLEY WILLARD E ,  COTLER-WAGNER TINA J ,  DELLAGUARDIA RONALD A ,  DOBUZINSKY DAVID M ,  PASSOW MICHAEL L ,  WILLE WILLIAM C

IPC: G03F7/40 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311

Abstract: PROBLEM TO BE SOLVED: To provide a resist prescription which is capable of reducing blisters that are generated in a reactive ion etching process to increase the deposit of a resin by-product. SOLUTION: Gaseous fluorocarbon etchant is excited by energy large enough to generate a plasma of high density, wherein the ratio of carbon to fluorine of the etchant is at least 0.33. A resist 12 which is least blistered under the above conditions contains resin binder of terpolymer besides a usual optically active component, wherein the resin binder is composed of (a) a first unit which contains groups unstable to acid, (b) a second unit which does not contain reactive groups and hydroxyl groups, and (c) a third unit which is conducive to development by an aqueous developing agent. The resist, layer 12 on a silicon oxide layer 14 is patterned, and plasma of high density is introduced onto the silicon oxide layer 14, and at least an opening 18 is provided to the silicon oxide layer 14 by etching.

公开(公告)号：DE69402232T2

公开(公告)日：1997-09-18

申请号：DE69402232

申请日：1994-01-14

Applicant: IBM

Inventor： BUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  GELORME JEFFREY D ,  WOOD ROBERT L ,  LINEHAN LEO L ,  SOORIYAKUMARAN RATNAM ,  TAI TSONG-LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: Improved chemically amplified negative tone microlithographic resist compositions and methods for the use thereof are disclosed. The compositions comprise, in admixture, a crosslinking agent, a polymeric binder, and a compound that generates acid upon exposure of the resist composition to imaging radiation. The invention is particularly related to compositions having a crosslinking agent which does not plasticize the polymeric binder or alternatively does not reduce the glass transition temperature thereof. This minimizes the diffusion of the acid component from exposed regions of the resist to unexposed regions, and helps maintain relief image dimensional control.

公开(公告)号：CA2090039A1

公开(公告)日：1992-03-19

申请号：CA2090039

申请日：1990-12-21

Applicant: IBM

Inventor： CONLEY WILLARD E ,  KWONG RANEE W ,  KVITEK RICHARD J ,  LANG ROBERT N ,  LYONS CHRISTOPHER F ,  MIURA STEVE S ,  MOREAU WAYNE M ,  SACHDEV HARBANS S ,  WOOD ROBERT L

IPC: G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: 2090039 9205474 PCTABS00011 A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

公开(公告)号：DE69821458D1

公开(公告)日：2004-03-11

申请号：DE69821458

申请日：1998-11-19

Applicant: IBM

Inventor： ARMACOST MICHAEL D ,  CONLEY WILLARD E ,  COTLER-WAGNER TINA J ,  DELLAGUARDIA RONALD A ,  DOBUZINSKY DAVID M ,  PASSOW MICHAEL L ,  WILLE WILLIAM C

IPC: G03F7/40 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

Abstract: A resist formulation minimizes blistering during reactive ion etching processes resulting in an increased amount of polymer by-product deposition. Such processes involve exciting a gaseous fluorocarbon etchant with sufficient energy to form a high-density plasma, and the use of an etchant having a carbon-to-fluorine ratio of at least 0.33. In addition to a conventional photoactive component, resists which minimize blistering under these conditions include a resin binder which is a terpolymer having: (a) units that contain acid-labile groups; (b) units that are free of reactive groups and hydroxyl groups; and (c) units that contribute to aqueous developability of the photoresist. After the photoresist is patterned on the silicon oxide layer and the high-density plasma is formed, the high-density plasma is introduced to the silicon oxide layer to etch at least one opening in the silicon oxide layer. Preferably, the terpolymer is made up of about 70% 4-hydroxystyrene, about 20% styrene, and about 10% t-butylacrylate.

公开(公告)号：DE3677665D1

公开(公告)日：1991-04-04

申请号：DE3677665

申请日：1986-07-25

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  JACOBS SCOTT L ,  MACK GEORGE L ,  MERRIT DAVID P ,  UPTMOR ANN M

IPC: C08L79/08 ,  C08K5/13 ,  C08K5/1545 ,  G03F7/004 ,  G03F7/037 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26

公开(公告)号：DE69402232D1

公开(公告)日：1997-04-30

申请号：DE69402232

申请日：1994-01-14

Applicant: IBM

Inventor： BUNSVOLD WILLIAM R ,  CONLEY WILLARD E ,  GELORME JEFFREY D ,  WOOD ROBERT L ,  LINEHAN LEO L ,  SOORIYAKUMARAN RATNAM ,  TAI TSONG-LIN

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027

Abstract: Improved chemically amplified negative tone microlithographic resist compositions and methods for the use thereof are disclosed. The compositions comprise, in admixture, a crosslinking agent, a polymeric binder, and a compound that generates acid upon exposure of the resist composition to imaging radiation. The invention is particularly related to compositions having a crosslinking agent which does not plasticize the polymeric binder or alternatively does not reduce the glass transition temperature thereof. This minimizes the diffusion of the acid component from exposed regions of the resist to unexposed regions, and helps maintain relief image dimensional control.

公开(公告)号：CA1308594C

公开(公告)日：1992-10-13

申请号：CA542534

申请日：1987-07-20

Applicant: IBM

Inventor： BRUNSVOLD WILLIAM R ,  CHOW MING-FEA ,  CONLEY WILLARD E ,  CROCKATT DALE M ,  FRECHET JEAN M J ,  HEFFERON GEORGE J ,  ITO HIROSHI ,  IWAMOTO NANCY E ,  WILLSON CARLTON G

IPC: G03C1/72 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

Abstract: The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree.C, and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree.C to about 250.degree.C that they remain soluble in common lithographic developers and strippers. The present invention also discloses resists comprising substituted polyvinyl benzoates Which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer. FI9-86-021