公开(公告)号：DE3066684D1

公开(公告)日：1984-03-29

申请号：DE3066684

申请日：1980-06-24

Applicant: IBM

Inventor： SILVESTRI VICTOR J ,  TANG DENNY D ,  WIEDMANN SIEGFRIED K

IPC: H01L27/082 ,  G11C11/411 ,  H01L21/331 ,  H01L21/74 ,  H01L21/763 ,  H01L21/8226 ,  H01L21/8228 ,  H01L27/02 ,  H01L29/73 ,  H01L21/82 ,  G11C11/40

Abstract: A vertical pair of complementary, bipolar transistors is disclosed which includes a semiconductor substrate of one conductivity type and a pair of dielectric isolation regions disposed in contiguous relationship with the substrate. An injector region of opposite conductivity type is disposed between the pair of isolation regions. A pair of heavily doped, polycrystalline, semiconductor regions of the one conductivity type is disposed over and in registry with the pair of isolation regions. Similarly, a single crystal, semiconductor region of the one conductivity type is disposed over and in registry with the injector region. Finally, a first zone of opposite conductivity type is disposed in the single crystal region and a second zone of the one conductivity type is disposed in the first zone. In addition, a method of manufacturing a semiconductor device having vertical complementary, bipolar transistors is disclosed which includes the steps of forming regions of dielectric isolation which are contiguous with a semiconductor substrate and a region of semiconductor of one conductivity type therebetween, the semiconductor substrate being of opposite conductivity type; forming regions of heavily doped, polycrystalline semiconductor of the opposite conductivity type and a region of single crystal semiconductor of the opposite conductivity type in registry with the regions of dielectric isolation and the semiconductor region of one conductivity type, respectively. The method also includes the step of forming a zone of one conductivity type in the region of single crystal semiconductor and a zone of opposite conductivity type in the zone of one conductivity type.

公开(公告)号：CA1161964A

公开(公告)日：1984-02-07

申请号：CA381224

申请日：1981-07-07

Applicant: IBM

Inventor： REISMAN ARNOLD ,  SILVESTRI VICTOR J ,  TANG DENNY D ,  WIEDMANN SIEGFRIED K ,  YU HWA N

IPC: H01L29/73 ,  H01L21/20 ,  H01L21/331 ,  H01L21/74 ,  H01L21/762 ,  H01L21/8226 ,  H01L27/082 ,  H01L29/423 ,  H01L29/72 ,  H01L21/28

Abstract: ?79-055 QUASI-SYMMETRICAL BIPOLAR TRANSISTOR STRUCTURE A symmetrical vertical bipolar transistor circuit is provided wherein the top junction and the bottom junctions are self-aligned. Both the top and bottom junctions of the bipolar transistor have substantially equal areas, thereby eliminating parasitic diodes. A method for fabricating the symmetrical bipolar transistor is also described, which includes preferred steps for self-alignment and simultaneous deposition of single crystal and polycrystalline regions.