公开(公告)号：JPH03178133A

公开(公告)日：1991-08-02

申请号：JP29703390

申请日：1990-11-01

Applicant: IBM

Inventor： TEECHIYAN CHIEN ,  CHINNTE KENTO CHIYUAN ,  GUANNPIYON RI ,  TAKU HAN NIN

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732

Abstract: PURPOSE: To prevent the punch-through of an edge or the breakdown from occurring by demarcating the base and emitter regions of a transistor, enabling one portion of a junction to be in parallel with at least a boundary surface, and providing a mesa-shaped p-n junction that ends at an insulating layer and where a polycrystalline region is electrically connected to the emitter region. CONSTITUTION: A p-n junction 5 of base-collector is formed at the boundary between a base 2 and a collector 4, and an oxide layer 6 partially covers the polycrystalline region of an extrinsic base 3, excluding a part that is directly connected to an intrinsic base 2. A silicon nitride layer 7 covers the oxide layer 6 and includes an extension part 8, and the edge part of the extension part demarcates the width of a base-emitter p-n junction 9. The p-n junction 9 is of mesa shape, the side part ends at the extension part 8 at one edge, and ends at the edge part of the flat part of the p-n junction 9 at the other edge, thus essentially eliminating punch-through or breakdown of the edge.

公开(公告)号：JPH0644571B2

公开(公告)日：1994-06-08

申请号：JP29703390

申请日：1990-11-01

Applicant: IBM

Inventor： TEECHIYAN CHIEN ,  CHINNTE KENTO CHIYUAN ,  GUANNPIYON RI ,  TAKU HAN NIN

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/10 ,  H01L29/732