公开(公告)号：DE3866935D1

公开(公告)日：1992-01-30

申请号：DE3866935

申请日：1988-03-15

Applicant: IBM

Inventor： HEIBLUM MORDEHAI ,  KNOEDLER CHRISTINA MARIE ,  THOMAS DAVID CHARLES

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/205 ,  H01L29/423 ,  H01L29/76

Abstract: A vertical ballistic transistor (50) is described. Base metallic contacts (160) of reliable thickness are deposited on a carrier depletable layer (101) and diffuse into the base (120). A depletion region (200) forms in the depletable layer (101). The depletion region electrically isolates the base contact (160) from the emitter (103). The thickness of the depletable layer (101) prevents the generation of usual depletion regions in the base (120) that tend to cut off base current.