公开(公告)号：CA1153825A

公开(公告)日：1983-09-13

申请号：CA367341

申请日：1980-12-22

Applicant: IBM

Inventor： HEIBLUM MORDEHAI

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/68 ,  H01L29/76 ,  H01L29/88 ,  H01L29/66

Abstract: SEMICONDUCTOR DEVICE A semiconductor device with performance in the 10-12 second range has an emitter region with a large source of carriers, a low barrier in a thin region less than the length of the mean-free path of an electron in contact with a high conductivity base having a width in the vicinity of the length of of the mean-free path of an electron providing thereby hot electron transfer current performance.

公开(公告)号：DE3163547D1

公开(公告)日：1984-06-20

申请号：DE3163547

申请日：1981-01-23

Applicant: IBM

Inventor： HEIBLUM MORDEHAI

IPC: H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/76 ,  H01L29/88 ,  H01L29/72

Abstract: A three-terminal semiconductor device having a switching time in the vicinity of 10 -12 seconds and exhibiting a dynamic negative resistance is made up of a thin barrier region in the emitter section (1) having a barrier height that is higher than a wider barrier region in the collector section (3). Both are separated by a base region (2) having a width comparable to the mean free path length of a majority carrier The device employs quantum me- chamcal tunneling as the dominant current flow mechanism from the emitter region (1) to the base region (2) and hot majority carner transfer as the dominant current flow mechanism through the base region (2) to the collector (3) region.

公开(公告)号：CA1271266A

公开(公告)日：1990-07-03

申请号：CA560862

申请日：1988-03-08

Applicant: IBM

Inventor： HEIBLUM MORDEHAI ,  KNOEDLER CHRISTINA M ,  THOMAS DAVID C

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/205 ,  H01L29/423 ,  H01L29/76 ,  H01L29/72

Abstract: THETA DEVICE WITH IMPROVED BASE CONTACT A vertical ballistic transistor is described. Base metallic contacts of reliable thickness are deposited on a carrier depletable layer and diffuse into the base. A depletion region forms in the depletable layer. The depletion region electrically isolates the base contact from the emitter. The thickness of the depletable layer prevents the generation of usual depletion regions in the base that tend to cut off base current.

公开(公告)号：CA1142268A

公开(公告)日：1983-03-01

申请号：CA367342

申请日：1980-12-22

Applicant: IBM

Inventor： HEIBLUM MORDEHAI

IPC: H01L29/205 ,  H01L21/331 ,  H01L29/73 ,  H01L29/76 ,  H01L29/88

Abstract: SEMICONDUCTOR DEVICE A three-terminal semiconductor device having a switching time in the vicinity of 10-12 seconds and exhibiting a dynamic negative resistance is made up of a thin barrier region in the emitter section having a barrier height that is higher than a wider barrier region in the collector section separated by a base region having a width comparable to the mean-free path length of a majority carrier The device employs quantum mechanical tunneling as the dominant current flow mechanism from the emitter region to the base region and hot majority carrier transfer as the dominant current flow mechanism through the base region to the collector region.

公开(公告)号：DE3866935D1

公开(公告)日：1992-01-30

申请号：DE3866935

申请日：1988-03-15

Applicant: IBM

Inventor： HEIBLUM MORDEHAI ,  KNOEDLER CHRISTINA MARIE ,  THOMAS DAVID CHARLES

IPC: H01L29/68 ,  H01L29/06 ,  H01L29/205 ,  H01L29/423 ,  H01L29/76

Abstract: A vertical ballistic transistor (50) is described. Base metallic contacts (160) of reliable thickness are deposited on a carrier depletable layer (101) and diffuse into the base (120). A depletion region (200) forms in the depletable layer (101). The depletion region electrically isolates the base contact (160) from the emitter (103). The thickness of the depletable layer (101) prevents the generation of usual depletion regions in the base (120) that tend to cut off base current.

公开(公告)号：DE3377602D1

公开(公告)日：1988-09-08

申请号：DE3377602

申请日：1983-01-26

Applicant: IBM ,  KAUFMAN HAROLD RICHARD

Inventor： HARPER JAMES MCKELL EDWIN ,  HEIBLUM MORDEHAI ,  KAUFMAN HAROLD RICHARD

IPC: B01J19/08 ,  H01J27/02 ,  H01J27/08 ,  H01J37/02 ,  H01J37/08 ,  H01J37/305 ,  H01J37/317 ,  H01L21/203 ,  H01L21/302 ,  H01L21/31

Abstract: A neutralised low energy ion beam is produced by forming a plasma between an anode (13) and a cathode (14) and maintaining a grid (16) at a potential slightly more positive than the cathode (14) so that a beam containing positive ions and high energy primary electrons from the plasma passes through the grid (16). … A neutralised high energy ion beam is produced by directing a low energy beam containing charged particles of opposite polarity to that of the ions in an unneutralised high energy ion beam across the latter beam. The low energy beam may be one produced by a generator as described above or another ion source and an electron source (21).

公开(公告)号：DE3171163D1

公开(公告)日：1985-08-08

申请号：DE3171163

申请日：1981-01-23

Applicant: IBM

Inventor： HEIBLUM MORDEHAI

IPC: H01L29/872 ,  H01L29/47 ,  H01L29/68 ,  H01L29/76 ,  H01L29/88 ,  H01L29/72