公开(公告)号：GB2512783B

公开(公告)日：2016-08-03

申请号：GB201412764

申请日：2013-01-03

Applicant: IBM

Inventor： EDWARD C COONEY ,  JEFFREY P GAMBINO ,  ZHONG-XIANG HE ,  TOM C LEE ,  XIAO HU LIU

IPC: H01L23/64 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for fabricating a back-end-of-line (BEOL) wiring structure, BEOL wiring structures, and design structures for a BEOL wiring structure. The BEOL wiring may be fabricated by forming a first wire in a dielectric layer and annealing the first wire in an oxygen-free atmosphere. After the first wire is annealed, a second wire is formed in vertical alignment with the first wire. A final passivation layer, which is comprised of an organic material such as polyimide, is formed that covers an entirety of a sidewall of the second wire.