公开(公告)号：MY116040A

公开(公告)日：2003-10-31

申请号：MYPI19993047

申请日：1999-07-20

Applicant: IBM

Inventor： FARIBORZ ASSADERAGHI ,  CLAUDE L BERTIN ,  JEFFREY P GAMBINO ,  LOUIS LU-CHEN HSU ,  JACK ALLAN MANDELMAN

IPC: H01L21/8242 ,  H01L21/336 ,  H01L21/84 ,  H01L27/108 ,  H01L23/52 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: AN ACTIVE FET BODY DEVICE WHICH COMPRISES AN ACTIVE FET REGION INCLUDING A GATE (13, 15, 16,24,26,28,30,3 I), A BODY REGION (4) AND ELECTRICAL CONNECTION BETWEEN SAID GATE AND SAID BODY REGION THAT IS LOCATED WITHIN THE ACTIVE FET REGION IS PROVIDED ALONG WITH VARIOUS METHODS FOR FABRICATING THE DEVICES. THE ELECTRICAL CONNECTION EXTENDS OVER SUBSTANTIALLY THE ENTIRE WIDTH OF THE FET. (FIGURE 6)

公开(公告)号：GB2512783B

公开(公告)日：2016-08-03

申请号：GB201412764

申请日：2013-01-03

Applicant: IBM

Inventor： EDWARD C COONEY ,  JEFFREY P GAMBINO ,  ZHONG-XIANG HE ,  TOM C LEE ,  XIAO HU LIU

IPC: H01L23/64 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Methods for fabricating a back-end-of-line (BEOL) wiring structure, BEOL wiring structures, and design structures for a BEOL wiring structure. The BEOL wiring may be fabricated by forming a first wire in a dielectric layer and annealing the first wire in an oxygen-free atmosphere. After the first wire is annealed, a second wire is formed in vertical alignment with the first wire. A final passivation layer, which is comprised of an organic material such as polyimide, is formed that covers an entirety of a sidewall of the second wire.