公开(公告)号：JPH03233937A

公开(公告)日：1991-10-17

申请号：JP33347990

申请日：1990-11-29

Applicant: IBM

Inventor： ROBAATO EDOWAADO BENDAANAGERU ,  KIYONNMIN KIMU ,  BUIKUTAA JIYOSEFU SHIRUBESUTOR ,  PABUERU SUMETANA ,  TOOMASU HAIDO SUTORADOUITSUKU ,  UIRIAMU HENRII HOWAITO

IPC: H01L29/73 ,  H01L21/205 ,  H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L29/732 ,  H01L29/78

Abstract: PURPOSE: To obtain a new, improved semiconductor structure which can be used advantageously for the formation of active and passive semiconductor devices by providing separating means having a region of insulating materials electrically separating the device region into a first layer, a second layer and in the second layer extending from the surface of the second layer to a first layer. CONSTITUTION: A first layer 36 of epitaxial semiconductor material having higher concentration of dopant relative to a substrate 32 and formed on the surface of the substrate 32 and a doped semiconductor substrate 32, and a second layer 40 of an epitaxial semiconductor material having lower concentration of dopant relative to that of the first layer 36 is provided. Also separating means including the region 42A, 42B of the insulating material for electrically separating the device region at the second layer 40, extending from the surface of the second layer 40 to the first layer 36, is provided. As a result of this, a new improved semiconductor device, containing the substrate 32 covered with a multilevel epitaxial structure 34 including the first epitaxial layer 36 with a high doping and the second layer 40 supporting the device, can be obtained.

公开(公告)号：JPS58171826A

公开(公告)日：1983-10-08

申请号：JP20051582

申请日：1982-11-17

Applicant: IBM

Inventor： BAANAADO KAATO BISHIYOFU ,  UIRIAMU JIYON PATORITSUKU ,  TOOMASU HAIDO SUTORADOUITSUKU

IPC: C30B33/00 ,  H01L21/322