公开(公告)号：US3459944A

公开(公告)日：1969-08-05

申请号：US3459944D

申请日：1966-01-04

Applicant: IBM

Inventor： TRIEBWASSER SOL

IPC: H01L29/00 ,  H01L31/113 ,  H01L11/14 ,  H01J39/12

CPC classification number: H01L31/1136 ,  H01L29/00

公开(公告)号：DE1277199B

公开(公告)日：1968-09-12

申请号：DEJ0023163

申请日：1963-02-12

Applicant: IBM

Inventor： CHEROFF GEORGE ,  HOCHBERG FREDERICK ,  REISMAN ARNOLD ,  TRIEBWASSER SOL

IPC: B22F3/10 ,  C04B35/547 ,  C04B35/64 ,  H01L21/00

Abstract: In a sintering process, the vapour pressure of the flux used is maintained substantially constant so that the flux concentration does not decrease during the process and affect the sintering. Preferred materials are photo-conductors such as CdSe and CdS or a solid solution of both using CdCr2, CdBr2 or CdI2 as fluxes. Numerous examples are given utilizing these materials, the sintering treatments involving heating to temperatures between 522 DEG and 600 DEG C. for 5-20 minutes in an atmosphere of 0.2 to 1.7% O and the rest N and the mixtures having between 5 and 20 mol. per cent flux; grain sizes between 4 and 15 m result. Copper may be added as an impurity. The vapour pressure is maintained either by using a small volume container or by providing an auxiliary source for vapour consisting merely of the flux material or alternatively using a second supply of the mixture which is being sintered. This auxiliary source may be covered with a layer of Al2O3 which acts as a molecular sieve to govern the rate of evaporation. Fig. 3 shows a suitable small volume inner container 10 which is closed by a substrate 11 carrying on its inner surface the material to be sintered. The container is carried on an endless chain 6 in the heating apparatus shown in Fig. 2 which comprises a glove box 1 and furnace 12. Means are provided for circulating and controlling the atmosphere. When only small quantities of flux are used which are insufficient to fill the container with vapour without affecting the residue, secondary sources of flux vapour are provided in the bottom of the container 10.

公开(公告)号：DE1541411A1

公开(公告)日：1969-11-27

申请号：DE1541411

申请日：1966-12-05

Applicant: IBM

Inventor： TRIEBWASSER SOL

IPC: H03B9/14 ,  H03K3/02

公开(公告)号：DE2962217D1

公开(公告)日：1982-03-25

申请号：DE2962217

申请日：1979-12-04

Applicant: IBM

Inventor： TRIEBWASSER SOL

IPC: H01L29/80 ,  H01L21/033 ,  H01L21/338 ,  H01L29/417 ,  H01L29/812 ,  H01L21/18

Abstract: A method for the production of metal-semiconductor field effect transistors (MESFET) is described. Practice of the method allows one to produce self-aligning MESFETs with Si sources and drains in close proximity having metal gates therebetween.

公开(公告)号：CA833746A

公开(公告)日：1970-02-03

申请号：CA833746D

Applicant: IBM

Inventor： TRIEBWASSER SOL