FINANCIAL TRANSACTION PROCESSING SYSTEM

    公开(公告)号:JPH11250146A

    公开(公告)日:1999-09-17

    申请号:JP32513298

    申请日:1998-11-16

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To reliably and safely transmit financial information by connecting one or plural remote computer systems through the internet so as to form a wide-area network which can be dynamically reconstituted. SOLUTION: A WF client object is sent to an accumulation exchanging transport mechanism and in order to be transmitted to a designated server through the internet, it is made into a queue together with the other objects. At the time of receiving the WF client object, a remote computer system inspects the object and in the case of receiving a perfect object, the system sends an affirming answer to the accumulation exchange mechanism on a transmission side to delete the WF client object. At the time of receiving the perfect object, the object is stored as a WF server object to be inputted to a map server function, which fetches a data buffer to decode it in the case of being enciphered.

    A financial transaction processing system providing reliable and secure transmission of information over the internet

    公开(公告)号:GB2332604A

    公开(公告)日:1999-06-23

    申请号:GB9819159

    申请日:1998-09-02

    Applicant: IBM

    Abstract: A financial transaction processing system comprises at least one local computer system which in response to a user input or event 31 generates a request 32 handled by an Input/Output Application Program Interface (API) 33 to generate a data buffer 34 that is optionally encrypted and forwarded to a message handling client API 37 which creates a client object 38 containing the data buffer. A store and forward transport mechanism 39 receives and queues client objects for transmission to remote servers 40 over the Internet. A message handling server receives client objects over the Internet and determines a destination from data contained in the client object. A map server function running on a remote computer system extracts the data buffer and invokes an appropriate message handler. The remote computer system receives data from the message handler translated into a protocol and data format of the remote computer. The system electronically integrates data captured from heterogeneous information systems and transmits it reliably and securely over the Internet.

    DOPANT CONTROL OF METAL SILICIDE FORMATION

    公开(公告)号:CA1238721A

    公开(公告)日:1988-06-28

    申请号:CA499556

    申请日:1986-01-14

    Applicant: IBM

    Abstract: A structure and method are described for forming different metal silicide phases, using the same metallurgy and the same processing steps. A layer of metal is deposited on a silicon substrate and is heated to thermally convert the metal-silicon combination to a metal silicide. The metal silicide phase which forms is strongly dependent upon the dopant and doping level in the silicon substrate, for various combinations of metal and dopant. Thus, different metal silicides can be formed on different regions of the substrate in accordance with the dopant and doping levels in those different regions, even though the process steps and metallurgy are the same. These different metal silicides can be tailored for different applications, including ohmic contacts, diode barrier contacts, interconnection lines, gate contacts, and diffusion barriers. YO984-029

    SEMI-CONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR

    公开(公告)号:CA1169586A

    公开(公告)日:1984-06-19

    申请号:CA383760

    申请日:1981-08-12

    Applicant: IBM

    Abstract: SEMICONDUCTOR DEVICE WITH SCHOTTKY BARRIER SILICIDE CONTACTS AND METHOD THEREFOR In the practice of this disclosure, rare earth disilicide low Schottky barriers (? 0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky barrier of ? 0.7 eV) are also available by practice of this disclosure. A method is disclosed for forming contemporaneously high (? 0.8 eV) and low (? 0.4 eV) energy Schottky barriers on an n-doped silicon substrate. Illustratively, the high energy Schottky barrier is formed by reacting platinum or iridium with silicon; the low energy Schottky barrier is formed by reacting a rare earth with silicon to form a disilicide. Illustratively, a double layer of Pt/on W is an effective diffusion barrier on Gd and prevents the Gd from oxidation.

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