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    Fin density control of multigate devices through sidewall image transfer processes
    1.
    发明专利
    Fin density control of multigate devices through sidewall image transfer processes 未知

    公开(公告)号：GB2521719A

    公开(公告)日：2015-07-01

    申请号：GB201418162

    申请日：2014-10-14

    Applicant: IBM

    Inventor： YIN YUNPENG ,  TSENG CHIAHSUN ,  HE HONG ,  YEH CHUN-CHEN

    IPC: H01L21/8234 ,  H01L27/108

    Abstract: There is disclosed a structure with a plurality of sidewalls formed in or on a plurality of mandrels over a semiconductor substrate 102 such that each of the mandrels includes a first sidewall composed of a first material 504 and a second sidewall composed of a second material 502 that is different from the first material. The two sidewalls can be deposited using an angled ion implantation. The first sidewall of a first mandrel of the plurality of mandrels is selectively removed. In addition, a pattern composed of remaining sidewalls of the plurality of sidewalls is transferred onto an underlying layer to form a hard mask in the underlying layer using a sidewall image transfer method. Further, the fins are formed by employing the hard mask and etching semiconducting material in the substrate.

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