公开(公告)号：JPH01124219A

公开(公告)日：1989-05-17

申请号：JP19076788

申请日：1988-08-01

Applicant: IBM

Inventor： UIRIAMU JIYOSEFU KOOTO ,  DONARUDO MAKUARUPIN KENII ,  MAIKERU RIN KAABAA ,  MAIKERU ARUBAATO RIICHI ,  JIEFURII AREN ROBINSON ,  ROBAATO UEIN SUIITOSAA

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/311

Abstract: PURPOSE: To provide spacers on organic mandrels which are formed on a substrate and have vertical side walls without exposing the mandrels to high treating temperatures by adhering organic conformal layers made of a material different from that of the mandrels onto the the mandrels and performing anisotropic etching on the conformal layers. CONSTITUTION: Photoresist mandrels 10 are made of an organic resin material. Since conformal organic layers 20 can be adhered to the mandrels 10 at a room temperature by using such an organic material that can be adhered comformally to the mandrels at a low temperature and etched steps can also be formed at a low temperature, the mandrels 10 are not cured in a heating step. Then spacers 20A are demarcated by performing anisotropic etching on the layers 20 in anisotropic oxygen gas plasma on the side walls of the mandrels 10. After the spacers 20A are demarcated, the mandrels 10 are removed by exposing the mandrels 10 to an etchant which hardly etches the spacers 20A. Therefore, the spacers 20A are left as they are. Then a mask for patterning a conductive layer 14 which lies under etch stop layers 12A and 12B below the spacers 20A is formed by patterning the layers 12A and 12B.

公开(公告)号：JPS63250475A

公开(公告)日：1988-10-18

申请号：JP861288

申请日：1988-01-20

Applicant: IBM

Inventor： UIRIAMU JIYOSEFU KOOTO ,  KARII AIN HOORANDO ,  TERAASU MONTE RAITO

IPC: C23F4/00 ,  H01L21/3213

公开(公告)号：JPH08243913A

公开(公告)日：1996-09-24

申请号：JP1052396

申请日：1996-01-25

Applicant: IBM

Inventor： UIRIAMU JIYOSEFU KOOTO ,  MAIKERU FURANSHISU ROFUAARO

IPC: B24B37/04 ,  B24D13/14 ,  H01L21/304 ,  B24B37/00

Abstract: PROBLEM TO BE SOLVED: To provide a polishing pad and a method for removing a material by uniformly polishing a substrate such as a semiconductor wafer or a chip. SOLUTION: A polishing pad used for chemical-mechanical polishing is deformed so as not to apply a different pressure to a different position of a pad surface in polishing. The polishing pad is so constituted as to have projecting regions 12, 14 and a non-projecting region. The polishing uniformity and the polishing speed can be adjusted and controlled by the structure and the selection of the polishing pad.

公开(公告)号：JPH0629246A

公开(公告)日：1994-02-04

申请号：JP27549091

申请日：1991-10-23

Applicant: IBM

Inventor： UIRIAMU JIYOSEFU KOOTO ,  JIYON EDOWAADO KURONIN ,  HAWAADO SUMISU RANDEISU

IPC: H01L21/288 ,  C23C18/31

Abstract: PURPOSE: To execute electroless plating on metal in a comparatively deep and narrow trench in a substrate by bringing a composition, having molecular structure containing a part which contains a metal and a connection part connected to the substrate and forms a substance layer, containing metal into contact with the dielectric substrate and executing electroless plating on metal on the formed layer of the part containing the metal. CONSTITUTION: A base wall 14 where silicon dioxide which forms the end wall of a trench 12 is exposed, a sidewall 16 coated with positive photoresist 20 which is not etched and the substrate coated with negative photoresist 18 are brought into contact with a specified species substance. The first connection part of the species substance is selectively connected to the base wall 14 of silicon dioxide. When one part of species substance is a part containing a metal and the connection part is connected to the base wall 14 of silicon dioxide, a surface-containing metal, which exhibits a catalytic operation with respect electroless plating. A species layer 22 is used on the base wall and the catalytic operation of electroless plating is executed. Then, copper is deposited by electroless plating. Thus, electroless plating is executed on a metal in a narrow and deep trench.