Double chamber ion source
    1.
    发明授权
    Double chamber ion source 失效
    双室离子源

    公开(公告)号:US3924134A

    公开(公告)日:1975-12-02

    申请号:US52831274

    申请日:1974-11-29

    Applicant: IBM

    CPC classification number: H01J27/14 H01J37/08

    Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.

    Abstract translation: 离子源包括两个放电室,其中一个放电室设置有灯丝和通向另一个室的孔,该另一个室又具有抽出孔。 在灯丝室中的惰性气体气氛中操作低电压电弧放电,而在第二离子化室中操作较高电压的电弧,该第二电离室包含将产生所需掺杂剂离子种类的蒸气。 整个源被浸入平行于连接灯丝,两个室之间的孔和提取孔的线的轴向磁场。

    2.
    发明专利
    未知

    公开(公告)号:FR2293055A1

    公开(公告)日:1976-06-25

    申请号:FR7531451

    申请日:1975-10-06

    Applicant: IBM

    Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.

    DOUBLE CHAMBER ION SOURCE
    3.
    发明专利

    公开(公告)号:CA1039860A

    公开(公告)日:1978-10-03

    申请号:CA238428

    申请日:1975-10-27

    Applicant: IBM

    Abstract: DOUBLE CHAMBER ION SOURCE The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.

    4.
    发明专利
    未知

    公开(公告)号:DE2552783A1

    公开(公告)日:1976-08-12

    申请号:DE2552783

    申请日:1975-11-25

    Applicant: IBM

    Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.

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