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公开(公告)号：US3924134A
公开(公告)日：1975-12-02
申请号：US52831274
申请日：1974-11-29
Applicant: IBM
Inventor： UMAN MYRON F , WINNARD JAMES R , WINTERS HAROLD F
Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.
Abstract translation: 离子源包括两个放电室，其中一个放电室设置有灯丝和通向另一个室的孔，该另一个室又具有抽出孔。 在灯丝室中的惰性气体气氛中操作低电压电弧放电，而在第二离子化室中操作较高电压的电弧，该第二电离室包含将产生所需掺杂剂离子种类的蒸气。 整个源被浸入平行于连接灯丝，两个室之间的孔和提取孔的线的轴向磁场。
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公开(公告)号：US3271589A
公开(公告)日：1966-09-06
申请号：US32882363
申请日：1963-12-09
Applicant: IBM
Inventor： BAXTER DUANE W , FELTON BRUCE C , ANTON WERNER , WINNARD JAMES R
IPC: H03K17/58
CPC classification number: H03K17/58
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公开(公告)号：US3693032A
公开(公告)日：1972-09-19
申请号：US3693032D
申请日：1971-04-23
Applicant: IBM
Inventor： WINNARD JAMES R
IPC: H03K19/088 , H03K3/26
CPC classification number: H03K19/088
Abstract: This specification discloses a technique of saturation control for a transistor transistor logic (TTL) circuit. The saturation control device includes an additional emitter of the input transistor which is connected to the collector of the output transistor.
Abstract translation: 本说明书公开了一种用于晶体管晶体管逻辑（TTL）电路的饱和度控制技术。 饱和度控制装置包括连接到输出晶体管的集电极的输入晶体管的附加发射极。
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公开(公告)号：FR2316724A1
公开(公告)日：1977-01-28
申请号：FR7615570
申请日：1976-05-17
Applicant: IBM
Inventor： KO WEN C , SCHIEN ALBERT , WINNARD JAMES R
IPC: G01Q60/00 , G21K1/02 , H01J37/317 , H01J37/30 , H01L21/265 , H01L21/425
Abstract: In an ion implantation apparatus, means for forming multiple, separate parallel ion beams, each having a predetermined spot diameter, and means for focusing each of said ion beams upon a predetermined chip area of a target wafer whereby multiple chip areas upon the wafer can be simultaneously implanted with prescribed ion dosages.
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Patent Agency Ranking
公开(公告)号：FR2293055A1
公开(公告)日：1976-06-25
申请号：FR7531451
申请日：1975-10-06
Applicant: IBM
Inventor： UMAN MYRON F , WINNARD JAMES R , WINTERS HAROLD F
Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.
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公开(公告)号：CA1039860A
公开(公告)日：1978-10-03
申请号：CA238428
申请日：1975-10-27
Applicant: IBM
Inventor： UMAN MYRON F , WINNARD JAMES R , WINTERS HAROLD F
Abstract: DOUBLE CHAMBER ION SOURCE The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.
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公开(公告)号：FR2316721A1
公开(公告)日：1977-01-28
申请号：FR7615568
申请日：1976-05-17
Applicant: IBM
Inventor： COULTAS DENNIS K , KELLER JOHN H , WINNARD JAMES R
IPC: G21K1/087 , H01J37/147 , H01J37/317 , H01L21/265 , H05H7/00 , H01J27/00
Abstract: A novel method and apparatus for achieving electrostatic deflection of high current ion beams within a scanning apparatus. In one embodiment, a pair of gates are provided, with one gate being oriented proximate each side of the deflection plates, and each gate being biased to a negative voltage of a sufficient amplitude to repel electrons which otherwise would be attracted to the positively-biased deflection plates to thereby protect the electron cloud from degradation, and maintain space charge neutralization of the ion beam. In another embodiment, means are provided to drive the deflection plates at negative voltages at all times and to maintain portions of the ground tube of the apparatus adjacent the deflection plates at a ground or negative level in order to avoid degradation of the electron sheath.
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公开(公告)号：DE2552783A1
公开(公告)日：1976-08-12
申请号：DE2552783
申请日：1975-11-25
Applicant: IBM
Inventor： UMAN MYRON F , WINNARD JAMES R , WINTERS HAROLD F
Abstract: The ion source is comprised of two discharge chambers one of which is provided with a filament and an aperture leading into the other chamber which in turn has an extraction orifice. A low voltage arc discharge is operated in an inert gas atmosphere in the filament chamber while an arc of higher voltage is operated in the second ionization chamber which contains a vapor which will give the desired dopant ion species. The entire source is immersed in an axial magnetic field parallel to a line connecting the filament, the aperture between the two chambers and the extraction orifice.
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公开(公告)号：CA772773A
公开(公告)日：1967-11-28
申请号：CA772773D
Applicant: IBM
Inventor： WERNER ANTON , WINNARD JAMES R , BAXTER DUANE W , FELTON BRUCE C
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