公开(公告)号：DE3876473T2

公开(公告)日：1993-06-09

申请号：DE3876473

申请日：1988-03-25

Applicant: IBM

Inventor： CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID ,  UMBACH CORWIN PAUL

IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H01L39/14

Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

公开(公告)号：DE3876473D1

公开(公告)日：1993-01-21

申请号：DE3876473

申请日：1988-03-25

Applicant: IBM

Inventor： CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID ,  UMBACH CORWIN PAUL

IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H01L39/14

Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

公开(公告)号：AU606673B2

公开(公告)日：1991-02-14

申请号：AU1452988

申请日：1988-04-12

Applicant: IBM

Inventor： CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID ,  UMBACH CORWIN PAUL

IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24

Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

公开(公告)号：AU1452988A

公开(公告)日：1988-10-13

申请号：AU1452988

申请日：1988-04-12

Applicant: IBM

Inventor： CLARK GREGORY JOHN ,  UMBACH CORWIN PAUL ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID

IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H01L39/12

Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

公开(公告)号：MX165961B

公开(公告)日：1992-12-11

申请号：MX1110788

申请日：1988-04-13

Applicant: IBM

Inventor： KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  UMBACH CORWIN PAUL ,  MARWICK ALAN DAVID ,  CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH

IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  G01R33/02

Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

公开(公告)号：DE3578634D1

公开(公告)日：1990-08-16

申请号：DE3578634

申请日：1985-10-11

Applicant: IBM

Inventor： LAIBOWITZ ROBERT BENJAMIN ,  UMBACH CORWIN PAUL

IPC: H01L39/22 ,  H01L21/48 ,  H01L23/538 ,  H01L39/24 ,  H05K3/46 ,  H01L23/52 ,  H01L39/04

Abstract: @ This invention relates to an electrical interconnection for connecting conductive layers and to a method for fabricating such devices. The interconnections (7) can be made from normal metal, superconductors, low bandgap insulators, semimetals or semiconductors depending on the application, and form vias between the conductive layers.After the formation of contamination cones (3) on a substrate (2), a first conductive layer (4) is deposited on a portion of a cone and over the substrate. An insulating material (6) is deposited conformally over the conductive layer (4) and cone (3) such that the thickness of the insulating matenal over the conductive layer has a thickness less than the height of the contamination cone. Those portions of the insulation material, the conductive layer and the contamination cone which extend beyond the nominal surface of the insulating layer are removed, exposing a portion of the cone and a portion of the conductive layer which forms an interconnection (7). In a final step, another layer (5) of conductive material is deposited such that an electrically conductive interconnection (7) is made between the just deposited conductive layer (5) and the initially deposited conductive layer 1 ( 4 ).