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    MANUFACTURE METHOD FOR NOBLE METAL OXIDE AND STRUCTURE FORMED FROM THE NOBLE METAL OXIDE
    2.
    发明专利
    MANUFACTURE METHOD FOR NOBLE METAL OXIDE AND STRUCTURE FORMED FROM THE NOBLE METAL OXIDE 失效

    公开(公告)号：JPH11224936A

    公开(公告)日：1999-08-17

    申请号：JP29838198

    申请日：1998-10-20

    Applicant: IBM

    Inventor： PETER RICHARD DANKOOMU ,  HUMMEL JOHN P ,  LAIBOWITZ ROBERT BENJAMIN ,  DEBORAH AN NEWMEYER ,  KATRINE LIN ZENGER ,  SCHROTT ALEJANDRO GABRIEL

    IPC: H01L21/8247 ,  C23C8/12 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/788 ,  H01L29/792

    Abstract: PROBLEM TO BE SOLVED: To provide a method for improving adhesion and interfacial characteristics between a noble metal part and a high-permeability film by exposing a surface of a noble-metal substrate to oxygen-containing energy and forming a noble-metal oxide film. SOLUTION: One of or a combination of high-density microwave, high-frequency plasma, ion collisions due to oxygen-containing ion beam is selected as an oxygen-containing energy source, and the energy source is used with or without a substrate bias under separate control. The noble metal is selected from among at least on of Pt, Ir, Au, Os, Ag, Pd, Rh and Ru, or selected from among a noble metal alloy of these noble metals. A noble metal oxide film 36 is formed on a noble-metal substrate 34, by exposing a surface of the substrate 34 to the oxygen containing energy source. The oxide layer thickness is normally in a range of 0.4 to 10 nm. In addition, the surface of the noble- metal substrate 34 may be exposed to the oxygen containing energy source for a sufficient time to form an interfacial reinforcement layer, and then a high-permeability material layer 38 may be deposited on the noble-metal substrate 34 with the oxygen containing layer in between.

    5.
    发明专利
    未知

    公开(公告)号：DE3876473D1

    公开(公告)日：1993-01-21

    申请号：DE3876473

    申请日：1988-03-25

    Applicant: IBM

    Inventor： CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  MARWICK ALAN DAVID ,  UMBACH CORWIN PAUL

    IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  H01L39/14

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    6.
    发明专利
    未知

    公开(公告)号：MX165961B

    公开(公告)日：1992-12-11

    申请号：MX1110788

    申请日：1988-04-13

    Applicant: IBM

    Inventor： KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  UMBACH CORWIN PAUL ,  MARWICK ALAN DAVID ,  CLARK GREGORY JOHN ,  GAMBINO RICHARD JOSEPH

    IPC: G01R33/035 ,  H01L39/22 ,  H01L39/24 ,  G01R33/02

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    7.
    发明专利
    未知

    公开(公告)号：DE3578634D1

    公开(公告)日：1990-08-16

    申请号：DE3578634

    申请日：1985-10-11

    Applicant: IBM

    Inventor： LAIBOWITZ ROBERT BENJAMIN ,  UMBACH CORWIN PAUL

    IPC: H01L39/22 ,  H01L21/48 ,  H01L23/538 ,  H01L39/24 ,  H05K3/46 ,  H01L23/52 ,  H01L39/04

    Abstract: @ This invention relates to an electrical interconnection for connecting conductive layers and to a method for fabricating such devices. The interconnections (7) can be made from normal metal, superconductors, low bandgap insulators, semimetals or semiconductors depending on the application, and form vias between the conductive layers.After the formation of contamination cones (3) on a substrate (2), a first conductive layer (4) is deposited on a portion of a cone and over the substrate. An insulating material (6) is deposited conformally over the conductive layer (4) and cone (3) such that the thickness of the insulating matenal over the conductive layer has a thickness less than the height of the contamination cone. Those portions of the insulation material, the conductive layer and the contamination cone which extend beyond the nominal surface of the insulating layer are removed, exposing a portion of the cone and a portion of the conductive layer which forms an interconnection (7). In a final step, another layer (5) of conductive material is deposited such that an electrically conductive interconnection (7) is made between the just deposited conductive layer (5) and the initially deposited conductive layer 1 ( 4 ).

    9.
    发明专利
    未知

    公开(公告)号：DE2363088A1

    公开(公告)日：1974-07-11

    申请号：DE2363088

    申请日：1973-12-19

    Applicant: IBM

    Inventor： DISTEFANO THOMAS HERMAN ,  LAIBOWITZ ROBERT BENJAMIN ,  ROSENBERG ROBERT

    IPC: G03G15/02 ,  H01T19/00 ,  H05F3/04

    Abstract: The present invention relates to electrodes used for charging electrophotographic image surfaces in copying machines. More particularly, the disclosure is directed to the negative corona discharge electrodes which produce a negative charge that is applied to the photoconductive surface exposed to the corona discharge. In the present invention, the electrode structure includes a combination of a wire of valve metal with a high resistivity coating spread uniformly over the surface of the wire. The valve metal, one example being tantalum, may serve as the electrode wire itself or may surround an inner wire such as stainless steel. By providing an electrode for corona discharge having a uniform high resistive coating, the plasma glow produced will spread uniformly along the length of the wire. By using a valve metal, which forms a hard oxide under the high resistivity coating, the electrode is self-healing in that if cracks or imperfections occur in the coating, the exposed valve metal will oxidize and fill in the cracks and imperfections.

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