HIGH TC SUPERCONDUCTORS
    2.
    发明专利

    公开(公告)号:AU606673B2

    公开(公告)日:1991-02-14

    申请号:AU1452988

    申请日:1988-04-12

    Applicant: IBM

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    HIGH TC SUPERCONDUCTORS
    3.
    发明专利

    公开(公告)号:AU1452988A

    公开(公告)日:1988-10-13

    申请号:AU1452988

    申请日:1988-04-12

    Applicant: IBM

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    4.
    发明专利
    未知

    公开(公告)号:MX165961B

    公开(公告)日:1992-12-11

    申请号:MX1110788

    申请日:1988-04-13

    Applicant: IBM

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    5.
    发明专利
    未知

    公开(公告)号:DE3876473T2

    公开(公告)日:1993-06-09

    申请号:DE3876473

    申请日:1988-03-25

    Applicant: IBM

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

    7.
    发明专利
    未知

    公开(公告)号:DE3876473D1

    公开(公告)日:1993-01-21

    申请号:DE3876473

    申请日:1988-03-25

    Applicant: IBM

    Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.

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