公开(公告)号：GB2603999A

公开(公告)日：2022-08-24

申请号：GB202116055

申请日：2021-11-09

Applicant: IBM

Inventor： BENEDIKT KERSTING ,  GHAZI SARWAT SYED ,  VARA SUDANANDA PRASAD JONNALAGADDA ,  MANUEL LE GALLO-BOURDEAU ,  ABU SEBASTIAN ,  TIMOTHY MATHEW PHILIP

IPC: H01L45/00 ,  G11C11/56 ,  G11C13/00

Abstract: A projected phase change memory device 100 has phase change material and a projection layer (liner) between first and second electrodes (104, 106). Device conductivity states depend on a ratio between crystalline and amorphous phases of the phase-change material. A size of a conductive portion 110 of the projection layer along an amorphous phase (112, 114, 116) in a reset state of the device is confined to less than a size of the amorphous phase. The projection layer may include a low conductivity, high resistance portion 118, doped differently to the conductive portion, whereby hydrogen or nitrogen doping may change along a gradient for a smooth resistance change. A discontinuity in conductance states of the memory device is created and minimum conductance in the reset state is reduced. The device may be a mushroom cell, lateral cell (fig. 5) or confined cell (fig.6) type, for in-memory and neuromorphic computing.