公开(公告)号：DE2809965A1

公开(公告)日：1978-09-14

申请号：DE2809965

申请日：1978-03-08

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  VECHTEN JAMES ALDEN VAN

IPC: G21F9/02 ,  G21G4/00 ,  G21H1/00 ,  G21H5/00

公开(公告)号：DE2728711A1

公开(公告)日：1978-02-16

申请号：DE2728711

申请日：1977-06-25

Applicant: IBM

Inventor： VECHTEN JAMES ALDEN VAN ,  WOODALL JERRY MAC PHERSON

IPC: H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L33/00 ,  H01S5/323 ,  H01L21/26

公开(公告)号：DE2750660A1

公开(公告)日：1978-07-06

申请号：DE2750660

申请日：1977-11-12

Applicant: IBM

Inventor： VECHTEN JAMES ALDEN VAN

IPC: F25D11/00 ,  F25B21/00 ,  F25D31/00 ,  G12B15/00 ,  G21K1/16 ,  H01L41/00 ,  H01L37/02

Abstract: This disclosure describes a dielectric refrigerator using orientable defect dipoles and operating between a high temperature, Th reservoir illustratively supplied by a Stirling cycle refrigerator (8 DEG K

公开(公告)号：DE2734203A1

公开(公告)日：1978-02-16

申请号：DE2734203

申请日：1977-07-29

Applicant: IBM

Inventor： VECHTEN JAMES ALDEN VAN ,  WOODALL JERRY MAC PHERSON

IPC: H01L21/205 ,  H01L21/22 ,  H01L21/265 ,  H01L29/20 ,  H01L29/205 ,  H01L29/207 ,  H01L31/10 ,  H01L33/00 ,  H01S5/00 ,  H01S5/323 ,  H01S3/19

公开(公告)号：DE2714945A1

公开(公告)日：1977-10-20

申请号：DE2714945

申请日：1977-04-02

Applicant: IBM

Inventor： VECHTEN JAMES ALDEN VAN

IPC: H01L29/04 ,  G02F1/015 ,  H01L31/04 ,  H01L31/072 ,  H01L33/00 ,  H01L33/16 ,  H01S5/00 ,  H01S5/32 ,  H01S3/19 ,  H01L31/06 ,  H01L21/20

Abstract: Practice of this disclosure reduces the concentration of intrinsic defects heretofore grown into semiconducting materials. Thereby, the operational lifetime is increased of heterostructure junction light emitting or responding or modulating devices which are fabricated in accordance with principles of the disclosure. Illustratively, the operational lifetime of a heterostructure junction laser device thus fabricated is extended. This improvement in operational lifetime of the device is attained by constraining growth, e.g., liquid phase epitaxial growth, of the several layers of semiconducting materials which form such a device to proceed only upon unreconstructed surface layers. Illustratively, such an unreconstructed surface is any one of the set of (311) surfaces of a crystalline semiconductor having diamond, zinc-blende, or chalcopyrite structure. In particular, the operational lifetime of GaAlAs double heterostructure junction lasers is increased by constraining the liquid phase epitaxial growth to proceed only upon a (311B), i.e., an As terminated (311), surface so that respective interfaces between layers of the resultant devices are (311) crystal planes.

公开(公告)号：DE2746054A1

公开(公告)日：1978-04-27

申请号：DE2746054

申请日：1977-10-13

Applicant: IBM

Inventor： MCGRODDY JAMES CLEARY ,  VECHTEN JAMES ALDEN VAN

IPC: G03G15/05 ,  B41J2/005 ,  B41J2/01 ,  B41J2/05 ,  B41J2/44 ,  B41J3/46 ,  B41M5/26 ,  G03G15/04 ,  G03G15/22 ,  G09G3/02 ,  G06K15/00 ,  B41J3/04