-
公开(公告)号：GB2603442A
公开(公告)日：2022-08-03
申请号：GB202207430
申请日：2020-10-23
Applicant: IBM
Abstract: An erasable magnetoresistive random-access memory (MRAM) structure and a method of making the same includes an MRAM cell disposed between bit line and word line circuit elements, and a vertical-cavity surface-emitting laser (VCSEL) element disposed above the MRAM cell. A laser output of the VCSEL is directed toward the MRAM cell.
Search Results
1
records
(took 0.015 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
