公开(公告)号：DE2747669A1

公开(公告)日：1978-05-24

申请号：DE2747669

申请日：1977-10-25

Applicant: IBM

Inventor： KAPLAN LEON H ,  VISWANATHAN NUNGAVARAM S ,  ZIMMERMAN STEVEN M

IPC: H05K3/06 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  H05K3/22 ,  H01L21/312

Abstract: Dissolution of an organic layer from a substrate is achieved by treatment with a mixt. of a persulphate and conc. sulphuric acid. The mixt. pref. contains 13-50g alkali persulphate (esp. K persulphate) per 100 ml. conc. sulphuric acid. Treatment can be carried out once or more times, followed by washing with water and drying. The process is claimed for use for the removal of polymeric organic photoresists from semiconductor substrates. These materials are used in the prodn. of printed circuits, exposure masks and microelectronic circuits. They can be negative photoresists, e.g. sensitised vinyl cinnamate polymers and partially cyclised poly-cis-isoprene polymers, or positive photoresists, e.g. diacetone-sensitised phenol/HCHO resins, polymethyl methacrylate polymers and copolymers and polysulphone polymers. No special safety precautions are necessary and there are no harmful side-effects on the prods. In an example, a soln. of 700g K persulphate in 2 l conc. sulphuric acid was used for the removal of a positive photoresist of cresol/HCHO novolak sensitised with orthoquinone-diazide on a primed, surface-oxidised Si wafer.

公开(公告)号：FR2371705A1

公开(公告)日：1978-06-16

申请号：FR7731531

申请日：1977-10-07

Applicant: IBM

Inventor： KAPLAN LEON H ,  VISWANATHAN NUNGAVARAM S ,  ZIMMERMAN STEVEN M

IPC: H05K3/06 ,  G03F7/42 ,  H01L21/027 ,  H01L21/30 ,  G03C1/495 ,  H01L21/312

Abstract: Dissolution of an organic layer from a substrate is achieved by treatment with a mixt. of a persulphate and conc. sulphuric acid. The mixt. pref. contains 13-50g alkali persulphate (esp. K persulphate) per 100 ml. conc. sulphuric acid. Treatment can be carried out once or more times, followed by washing with water and drying. The process is claimed for use for the removal of polymeric organic photoresists from semiconductor substrates. These materials are used in the prodn. of printed circuits, exposure masks and microelectronic circuits. They can be negative photoresists, e.g. sensitised vinyl cinnamate polymers and partially cyclised poly-cis-isoprene polymers, or positive photoresists, e.g. diacetone-sensitised phenol/HCHO resins, polymethyl methacrylate polymers and copolymers and polysulphone polymers. No special safety precautions are necessary and there are no harmful side-effects on the prods. In an example, a soln. of 700g K persulphate in 2 l conc. sulphuric acid was used for the removal of a positive photoresist of cresol/HCHO novolak sensitised with orthoquinone-diazide on a primed, surface-oxidised Si wafer.