公开(公告)号：GB2494035A

公开(公告)日：2013-02-27

申请号：GB201214380

申请日：2011-05-24

Applicant: IBM

Inventor： RYLYAKOV ALEXANDER ,  SCHOW CLINT LEE ,  GREEN WILLIAM MICHAEL ,  VLASOV YURIL

IPC: G02F1/01 ,  G02F1/025 ,  H04B3/40

Abstract: A transmission line (304) includes a plurality of segments forming an electrical path (203) and a continuous optical waveguide (205) passing through the segments. Discrete inductors (102) are formed between and connect adjacent segments. The inductors (102) are formed in a plurality of metal layers of an integrated circuit so as to balance the capacitance of an optical modulator which includes the transmission line (304) formed on the optical waveguide (205), thereby achieving a predetermined characteristic impedance for the transmission line. A delay locked loop (305) is used to control varactors (302) so as to match the delays of the optical and electrical signals. Optical waveguide segments (210) may be used to match the delays.

公开(公告)号：GB2495437A

公开(公告)日：2013-04-10

申请号：GB201300364

申请日：2011-06-21

Applicant: IBM

Inventor： PARK JIN-HONG ,  ASSEFA SOLOMON ,  KIM JEE HWAN ,  VLASOV YURIL

IPC: H01L31/108 ,  H01L31/18

Abstract: A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer.

公开(公告)号：GB2495437B

公开(公告)日：2014-07-23

申请号：GB201300364

申请日：2011-06-21

Applicant: IBM

Inventor： PARK JIN-HONG ,  ASSEFA SOLOMON ,  KIM JEE HWAN ,  VLASOV YURIL

IPC: H01L31/108 ,  H01L31/18