公开(公告)号：JPH10209071A

公开(公告)日：1998-08-07

申请号：JP154298

申请日：1998-01-07

Applicant: IBM

Inventor： GRECO NANCY ANNE ,  GRECO STEPHEN EDWARD ,  WAGNER TINA JANE

IPC: H01L21/28 ,  H01L21/768

Abstract: PROBLEM TO BE SOLVED: To obtain perfect optical resolution of holes and bars by using a conventional manufacturing equipment, by forming a plurality of second aperture parts which correspond to a plurality of second patterned features and stretch through a first and a second layers, in the second layer, filling the aperture parts. SOLUTION: A first layer is formed on a semiconductor substrate 4, and only a plurality of first features having a first feature size are patterned on the first layer. Parts of the first layer which correspond to the patterned first features are eliminated, and a plurality of aperture parts are formed in the first layer and filled. A second layer is formed on the first layer and the filled aperture parts, a plurality of second features having a second feature size are patterned on the second layer, and parts of the first and the second layer which correspond to the patterned second features are eliminated. As a result, a plurality of second aperture parts which correspond to a plurality of the second patterned features and stretch through the first and the second layers are formed in the second layer and filled.

公开(公告)号：DE69738705D1

公开(公告)日：2008-07-03

申请号：DE69738705

申请日：1997-12-19

Applicant: IBM

Inventor： GRECO NANCY ANNE ,  GRECO STEPHEN EDWARD ,  WAGNER TINA JANE

IPC: H01L21/28 ,  H01L21/768

Abstract: A method of fabricating semiconductor structures, particularly contact structures, forms features of differing sizes at different points in the semiconductor process, so as to enhance lithographic resolution.