2.
    发明专利
    未知

    公开(公告)号:DE3684478D1

    公开(公告)日:1992-04-23

    申请号:DE3684478

    申请日:1986-12-30

    Applicant: IBM

    Abstract: Disymmetry is produced in the DC mode by increased pmpedance connected in series with the second stage of the latch cell. The series impedances (R31,R32) are connected in the path for parasitic currents between the positive voltage source (Vdd) and earth (Gnd). When the data input (Do) is at logic one, the path to earth from the voltage source of parasitic current is through the first series resistance (R31) and transistor devices (P36,N33,N32). The first series resistance is embodied as a P-type transistor device (P38) of which the gate is earthed.

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