公开(公告)号：ES340823A1

公开(公告)日：1968-06-16

申请号：ES340823

申请日：1967-05-22

Applicant: IBM

Inventor： WALSH J ,  MURPHY D ,  TURNBULL J

IPC: H03K19/013 ,  H03K19/086 ,  H01G

公开(公告)号：BE695778A

公开(公告)日：1967-09-01

申请号：BE695778D

申请日：1967-03-20

Applicant: IBM

Inventor： WALSH J ,  MURPHY D ,  TURNBULL J

IPC: H03K19/013 ,  H03K19/086

Abstract: 1,176,876. Transistor switching circuits. INTERNATIONAL BUSINESS MACHINES CORP. 30 March, 1967 [24 May, 1966], No. 14459/67. Heading H3T. A switching circuit comprises a first transistor 12 with its emitter coupled to the collector of a second transistor 14, an impedance 32 for establishing a potential at the base of the transistor 14, and control means 34 coupled between the base and collector of transistor 14 to reduce the forward bias on the base-collector junction of transistor 14 when transistor 12 is cut off. Application of a negative potential -e 2 to the base of transistor 12 cuts it off, and switches on transistor 34 to hold the point 36 more positive than -e 2 .

公开(公告)号：SE318310B

公开(公告)日：1969-12-08

申请号：SE717967

申请日：1967-05-23

Applicant: IBM

Inventor： WALSH J ,  MURPHY D ,  TURNBULL J

IPC: H03K19/013 ,  H03K19/086 ,  H03K17/60

Abstract: 1,176,876. Transistor switching circuits. INTERNATIONAL BUSINESS MACHINES CORP. 30 March, 1967 [24 May, 1966], No. 14459/67. Heading H3T. A switching circuit comprises a first transistor 12 with its emitter coupled to the collector of a second transistor 14, an impedance 32 for establishing a potential at the base of the transistor 14, and control means 34 coupled between the base and collector of transistor 14 to reduce the forward bias on the base-collector junction of transistor 14 when transistor 12 is cut off. Application of a negative potential -e 2 to the base of transistor 12 cuts it off, and switches on transistor 34 to hold the point 36 more positive than -e 2 .

公开(公告)号：BR7806949A

公开(公告)日：1979-05-15

申请号：BR7806949

申请日：1978-10-23

Applicant: IBM

Inventor： ANANTHA N ,  WALSH J ,  BHATIA H

IPC: H01L29/73 ,  H01L21/033 ,  H01L21/225 ,  H01L21/331 ,  H01L21/762 ,  H01L23/532 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L21/32 ,  H01L29/08

Abstract: A method for manufacturing a high performance bipolar device and the resulting structure which has a very small emitter-base spacing is described. The small emitter-base spacing, reduces the base resistance compared to earlier device spacing and thereby improves the performance of the bipolar device. The method involves providing a silicon semiconductor body having regions of monocrystalline silicon isolated from one another by isolation regions and a buried subcollector therein. A base region is formed in the isolated monocrystalline silicon. A mask is formed on the surface of the silicon body covering those regions designated to be the emitter and collector reach-through regions. A doped polycrystalline silicon layer is then formed through the mask covering the base region and making ohmic contact thereto. An insulating layer is formed over the polysilicon layer. The mask is removed from those regions designated to be the emitter and collector reach-through regions. The emitter junction is then formed in the base region and the collector reach-through formed to contact the buried subcollector. Electrical contacts are made to the emitter and collector. The doped polycrystalline silicon layer is the electrical contact to the base regions.

公开(公告)号：GB1176876A

公开(公告)日：1970-01-07

申请号：GB1445967

申请日：1967-03-30

Applicant: IBM

Inventor： WALSH J ,  MURPHY D ,  TURNBULL J

IPC: H03K19/013 ,  H03K19/086

Abstract: 1,176,876. Transistor switching circuits. INTERNATIONAL BUSINESS MACHINES CORP. 30 March, 1967 [24 May, 1966], No. 14459/67. Heading H3T. A switching circuit comprises a first transistor 12 with its emitter coupled to the collector of a second transistor 14, an impedance 32 for establishing a potential at the base of the transistor 14, and control means 34 coupled between the base and collector of transistor 14 to reduce the forward bias on the base-collector junction of transistor 14 when transistor 12 is cut off. Application of a negative potential -e 2 to the base of transistor 12 cuts it off, and switches on transistor 34 to hold the point 36 more positive than -e 2 .

公开(公告)号：SE327729B

公开(公告)日：1970-08-31

申请号：SE651666

申请日：1966-05-12

Applicant: IBM

Inventor： WALSH J ,  TURNBULL J

IPC: H03K17/60 ,  H03K19/013 ,  H03K19/086

Abstract: 1,145,874. Transistor switching circuits. INTERNATIONAL BUSINESS MACHINES CORP. 20 April, 1966 [14 May, 1965], No. 17227/66. Heading H3T. In a current switching digital circuit comprising at least two transistors having a common emitter load, oscillation due to the input line to one of the transistors becoming inductive and the load becoming capacitive at certain frequencies, is prevented by shunting part of the load by a capacitor or the whole of the load by the series combination of resistance and capacitance. The circuit may form an emitter follower logic device.

公开(公告)号：FR1518364A

公开(公告)日：1968-03-22

申请号：FR06008447

申请日：1967-04-04

Applicant: IBM

Inventor： WALSH J ,  MURPHY D ,  TURNBULL J

IPC: H03K19/013 ,  H03K19/086

Abstract: 1,176,876. Transistor switching circuits. INTERNATIONAL BUSINESS MACHINES CORP. 30 March, 1967 [24 May, 1966], No. 14459/67. Heading H3T. A switching circuit comprises a first transistor 12 with its emitter coupled to the collector of a second transistor 14, an impedance 32 for establishing a potential at the base of the transistor 14, and control means 34 coupled between the base and collector of transistor 14 to reduce the forward bias on the base-collector junction of transistor 14 when transistor 12 is cut off. Application of a negative potential -e 2 to the base of transistor 12 cuts it off, and switches on transistor 34 to hold the point 36 more positive than -e 2 .

公开(公告)号：NL6706926A

公开(公告)日：1967-11-27

申请号：NL6706926

申请日：1967-05-19

Applicant: IBM

Inventor： WALSH J ,  MURPHY D ,  TURNBULL J

IPC: H03K19/013 ,  H03K19/086

Abstract: 1,176,876. Transistor switching circuits. INTERNATIONAL BUSINESS MACHINES CORP. 30 March, 1967 [24 May, 1966], No. 14459/67. Heading H3T. A switching circuit comprises a first transistor 12 with its emitter coupled to the collector of a second transistor 14, an impedance 32 for establishing a potential at the base of the transistor 14, and control means 34 coupled between the base and collector of transistor 14 to reduce the forward bias on the base-collector junction of transistor 14 when transistor 12 is cut off. Application of a negative potential -e 2 to the base of transistor 12 cuts it off, and switches on transistor 34 to hold the point 36 more positive than -e 2 .