公开(公告)号：DE69226328D1

公开(公告)日：1998-08-27

申请号：DE69226328

申请日：1992-10-09

Applicant: IBM

Inventor： COTE DONNA RIZZONE ,  STANASOLOVICH DAVID ,  WARREN RONALD ARCHER

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L29/78

Abstract: A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having a capped region (18) whose sidewall (24) is to be contacted and the method for making the same. The method includes the steps of forming a sidewall spacer (28) contiguous with the said region depositing an insulating layer (34) contiguous with the sidewall spacer so as to insulate the said region and spacer adjacent thereto, etching the sidewall spacer (28) selectively to the cap (20) and the insulating layer (34) for forming a lateral contact window opening (40) for allowing access to the said region, and filling the said contact window opening with a conductive material so as to laterally contact the region (18) for forming the desired stud (42).

公开(公告)号：DE69226328T2

公开(公告)日：1999-03-25

申请号：DE69226328

申请日：1992-10-09

Applicant: IBM

Inventor： COTE DONNA RIZZONE ,  STANASOLOVICH DAVID ,  WARREN RONALD ARCHER

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L29/78

Abstract: A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having a capped region (18) whose sidewall (24) is to be contacted and the method for making the same. The method includes the steps of forming a sidewall spacer (28) contiguous with the said region depositing an insulating layer (34) contiguous with the sidewall spacer so as to insulate the said region and spacer adjacent thereto, etching the sidewall spacer (28) selectively to the cap (20) and the insulating layer (34) for forming a lateral contact window opening (40) for allowing access to the said region, and filling the said contact window opening with a conductive material so as to laterally contact the region (18) for forming the desired stud (42).