公开(公告)号：JPH11317404A

公开(公告)日：1999-11-16

申请号：JP6179999

申请日：1999-03-09

Applicant: SIEMENS AG ,  IBM

Inventor： COTE DONNA RIZZONE ,  COTE WILLIAM JOSEPH ,  NGUYEN SON VAN ,  KIRCHHOFF MARKUS ,  LEVY MAX G ,  HAUF MANFRED

IPC: H01L21/318 ,  H01L21/28 ,  H01L21/30 ,  H01L21/314 ,  H01L21/8242 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To effectively passivate surface states by forming a device structure provided with an oxynitride layer formed through the plasma enhanced chemical vapor deposition method, and making the passivation of the surface state of the device easy. SOLUTION: An H-R silicon nitride layer is formed in a device structure 200 as the barrier or liner layer 260 of the wiring of devices. The structure 200 is provided with a gate 210, a drain, a source 230, and an STI region 240. The gate 210 contains a poly-layer 212, a silicide layer 214 of WSix , etc., and a silicon nitride cap layer 218, and the device structure 200 contains a spacer layer 250. The H-R layer is formed by the plasma-enhanced chemical vapor deposition(PECVD) method. In addition, an oxynitride is used in stead of the HR silicon nitride, so as to make the nitride function as a psssivation structure like a barrier layer. The oxynitride is formed, for example, by the PECVD method.

公开(公告)号：JPH09181064A

公开(公告)日：1997-07-11

申请号：JP29863796

申请日：1996-11-11

Applicant: IBM ,  SIEMENS AG

Inventor： COTE DONNA RIZZONE ,  FORSTER JOHN CURT ,  GREWAL VIRINDER SINGH ,  KONECNI ANTHONY JOSEPH ,  PODLESNIK DRAGAN VALENTIN

IPC: C23C16/50 ,  C23C16/44 ,  C23C16/509 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318

Abstract: PROBLEM TO BE SOLVED: To prevent the wall of a chamber for productive reaction and plasma from interacting with each other during a process using the plasma by operating the reaction chamber of a plasma enhanced chemical vapor deposition(PECVD) system under a higher pressure above a specific value, and monitoring the operation of the system wherein the direct-current bias of a driven electrode is observed. SOLUTION: A wafer 15 is placed on the grounded susceptor 14 under the driven electrode 13 in a reaction chamber. The pressure in the chamber 11 is then adjusted to 12-20Torr. Mixed gas is excited and ionized to cause chemical reaction on the wafer 15 and form a passivation film there. At this point of the process, the plasma potential of the upper driven electrode 13 is measured, and is controlled to a positive stable direct-current bias, or potential, exceeding approx. 10V. Thus contained uniform glow discharge is caused. This prevents interaction between plasma and the wall 12 of the chamber.

公开(公告)号：DE69603569T2

公开(公告)日：2000-02-24

申请号：DE69603569

申请日：1996-12-12

Applicant: SIEMENS AG ,  IBM

Inventor： COTE DONNA RIZZONE ,  FORSTER JOHN CURT ,  GREWAL VIRINDER SINGH ,  KONECNI ANTHONY JOSEPH ,  PODLESNIK DRAGAN VALENTIN

IPC: C23C16/44 ,  C23C16/509 ,  C23C16/52 ,  H01L21/31 ,  C23C16/50 ,  H01L21/316 ,  H01L21/318 ,  H01L21/00

Abstract: In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes (13, 14) away from the influence of the walls (12) of the discharge chamber (11). The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode (13) until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode (13) and the susceptor electrode (14), controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body (15) being coated which maximizes yield.

公开(公告)号：DE69603569D1

公开(公告)日：1999-09-09

申请号：DE69603569

申请日：1996-12-12

Applicant: SIEMENS AG ,  IBM

Inventor： COTE DONNA RIZZONE ,  FORSTER JOHN CURT ,  GREWAL VIRINDER SINGH ,  KONECNI ANTHONY JOSEPH ,  PODLESNIK DRAGAN VALENTIN

IPC: C23C16/44 ,  C23C16/509 ,  C23C16/52 ,  H01L21/31 ,  C23C16/50 ,  H01L21/316 ,  H01L21/318 ,  H01L21/00

Abstract: In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes (13, 14) away from the influence of the walls (12) of the discharge chamber (11). The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode (13) until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode (13) and the susceptor electrode (14), controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body (15) being coated which maximizes yield.

公开(公告)号：DE69226328T2

公开(公告)日：1999-03-25

申请号：DE69226328

申请日：1992-10-09

Applicant: IBM

Inventor： COTE DONNA RIZZONE ,  STANASOLOVICH DAVID ,  WARREN RONALD ARCHER

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L29/78

Abstract: A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having a capped region (18) whose sidewall (24) is to be contacted and the method for making the same. The method includes the steps of forming a sidewall spacer (28) contiguous with the said region depositing an insulating layer (34) contiguous with the sidewall spacer so as to insulate the said region and spacer adjacent thereto, etching the sidewall spacer (28) selectively to the cap (20) and the insulating layer (34) for forming a lateral contact window opening (40) for allowing access to the said region, and filling the said contact window opening with a conductive material so as to laterally contact the region (18) for forming the desired stud (42).

公开(公告)号：SG78275A1

公开(公告)日：2001-02-20

申请号：SG1997002971

申请日：1997-08-19

Applicant: IBM

Inventor： COTE DONNA RIZZONE ,  COTE WILLIAM JOSEPH ,  MIURA DONNA DIANE ,  WASKIEWICZ CHRISTOPHER JOSEPH

IPC: C23C16/30 ,  C23C16/44

公开(公告)号：DE69226328D1

公开(公告)日：1998-08-27

申请号：DE69226328

申请日：1992-10-09

Applicant: IBM

Inventor： COTE DONNA RIZZONE ,  STANASOLOVICH DAVID ,  WARREN RONALD ARCHER

IPC: H01L21/28 ,  H01L21/3105 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L23/48 ,  H01L23/522 ,  H01L29/78

Abstract: A contact stud for a semiconductor structure is fabricated by providing a semiconductor substrate having a capped region (18) whose sidewall (24) is to be contacted and the method for making the same. The method includes the steps of forming a sidewall spacer (28) contiguous with the said region depositing an insulating layer (34) contiguous with the sidewall spacer so as to insulate the said region and spacer adjacent thereto, etching the sidewall spacer (28) selectively to the cap (20) and the insulating layer (34) for forming a lateral contact window opening (40) for allowing access to the said region, and filling the said contact window opening with a conductive material so as to laterally contact the region (18) for forming the desired stud (42).