公开(公告)号：DE69010485T2

公开(公告)日：1995-01-26

申请号：DE69010485

申请日：1990-04-06

Applicant: IBM

Inventor： HARDER CHRISTOPH DR ,  HEUBERGER WILHELM ,  HOH PETER ,  WEBB DAVID

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01L33/00 ,  H01S3/19 ,  H01L21/308

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.

公开(公告)号：DE69010485D1

公开(公告)日：1994-08-11

申请号：DE69010485

申请日：1990-04-06

Applicant: IBM

Inventor： HARDER CHRISTOPH DR ,  HEUBERGER WILHELM ,  HOH PETER ,  WEBB DAVID

IPC: H01S5/00 ,  H01L21/318 ,  H01S5/22 ,  H01L33/00 ,  H01S3/19 ,  H01L21/308

Abstract: A process for forming the ridge structure of a self-aligned semiconductor laser, particularly useful for long wavelength devices as required for signal transmission systems. Described is the process as applied to an InP-system, double heterostructure (DH) laser. A thin Si3N4 layer (41) is inserted between the photoresist mask (42) that defines the ridge structure, and the contact layer (35). This results in improved adhesion and reduced etch undercutting whereby the ohmic contact area is increased, heat development decreased and device properties improved. Using a Si3N4 layer (41) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si3N4 layer (43) for device embedding, provides for the etch selectivity required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.