公开(公告)号：DE3268140D1

公开(公告)日：1986-02-06

申请号：DE3268140

申请日：1982-09-08

Applicant: IBM

Inventor： BARGON JOACHIM ,  HIRAOKA HIROYUKI ,  WELSH LAWRENCE WILLIAM

IPC: G03F7/039 ,  G03F7/004 ,  G03F7/038 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40 ,  H01L21/027 ,  H01L21/312

Abstract: A photoresist that has strong resistance to reactive ion etching, high photosensitivity to mid- and deep UV-light, and high resolution capability is formed by using as the resist material a copolymer of methacrylonitrile and methacrylic acid, and by baking the resist before the exposure to light for improved photosensitivity, and after exposure to light, development, and prior to treatment with reactive ion etching.